*Nov 28, 2005 *Doc. ID: 78283, S-52447, Rev. A .SUBCKT Si4563DY D1 G1 S1 D2 G2 S2 X1 D1 G1 S1 Si4563N X2 D2 G2 S2 Si4563P .ENDS Si4563DY *N-CH .SUBCKT Si4563N D G S M1 3 G S S NMOS W=3708309u L=0.25u M2 S G S D PMOS W=3708309u L=0.50u R1 D 3 RTEMP 6E-3 CGS G S 2200E-12 DBD S D DBD **************************************************************** .MODEL NMOS NMOS ( LEVEL = 3 TOX = 5E-8 + RS = 6.2E-3 RD = 0 NSUB = 1.63E17 + kp = 8.5E-6 UO = 650 + VMAX = 0 XJ = 5E-7 KAPPA = 1E-3 + ETA = 1E-4 TPG = 1 + IS = 0 LD = 0 + CGSO = 0 CGDO = 0 CGBO = 0 + TLEV = 1 BEX = -1.5 TCV = 3.7E-3 + NFS = 0.8E12 DELTA = 0.1) **************************************************************** .MODEL PMOS PMOS ( LEVEL = 3 TOX = 5E-8 +NSUB = 2E16 TPG = -1) **************************************************************** .MODEL DBD D (CJO=400E-12 VJ=0.38 M=0.34 +FC=0.1 IS=1E-12 TT=9.3E-8 N=1 BV=40.2) **************************************************************** .MODEL RTEMP R (TC1=8.5E-3 TC2=5.5E-6) **************************************************************** .ENDS Si4563N *P-CH .SUBCKT Si4563P D G S M1 3 G S S PMOS W=3481643u L=0.25u M2 S G S D NMOS W=3481643u L=0.50u R1 D 3 RTEMP 6E-3 CGS G S 1500E-12 DBD D S DBD *************************************************************** .MODEL PMOS PMOS ( LEVEL = 3 TOX = 4E-8 + RS = 11.3E-3 RD = 0 NSUB = 1.04E17 + KP = 4.1E-6 UO = 400 + VMAX = 0 XJ = 5E-7 KAPPA = 4E-2 + ETA = 1E-4 TPG = -1 + IS = 0 LD = 0 + CGSO = 0 CGDO = 0 CGBO = 0 + TLEV = 1 BEX = -1.5 TCV = 3E-3 + NFS = 0.8E12 DELTA = 0.1) *************************************************************** .MODEL NMOS NMOS ( LEVEL = 3 TOX = 4E-8 +NSUB = 4E16 TPG = -1) *************************************************************** .MODEL DBD D (CJO=400E-12 VJ=0.38 M=0.33 +RS=0.1 FC=0.5 IS=1E-12 TT=6E-8 N=1 BV=41) *************************************************************** .MODEL RTEMP R (TC1=12E-3 TC2=5.5E-6) *************************************************************** .ENDS Si4563P