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* Copyright:                   *
* Vishay Intertechnology, Inc. *
********************************
* Technology: DISCRETE DIODE
* Device: Diode S07B
* Description:
* Type: Typical (nom)
* Model established: 20.11.2003, by Harald Stix, VSA/ASSP-VOE
* Wafer:
* Remarks:
* Revision: 20.11.2003
* Simulation Model: 
* Simulator: PSPICE

*BeginParam
*IS=6.1970E-9
*N=1.8945
*RS=47.725E-3
*IKF=1.0000E3
*XTI=3
*EG=1.1100
*CJO=8.8495E-12
*M=.32179
*VJ=.3905
*FC=.5
*ISR=1.3000E-9
*NR=1
*BV=100.77
*IBV=10
*TT=2.9596E-6
*EndParam

*DEVICE=S07B,D

* S07B D model
* created using Parts release 7.1 on 11/20/03
* Parts is a MicroSim product.
.MODEL S07B D
+ IS=6.1970E-9
+ N=1.8945
+ RS=47.725E-3
+ IKF=1.0000E3
+ CJO=8.8495E-12
+ M=.32179
+ VJ=.3905
+ ISR=1.3000E-9
+ NR=1
+ BV=100.77
+ IBV=10
+ TT=2.9596E-6
*$