*  Model for Vishay diode 1N4448W-V 
* 
*  VISHAY Semiconductor GmbH
*  Hartmut Harmel
*  11 May 2009
*
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*
.SUBCKT 1N4448W 1 2
.MODEL PN D (
+ N=1.75
+ IS=0.38E-9
+ RS=0.580
+ trs1=0.0006
+ IKF=35.490E-3
+ XTI=3
+ CJO=0.62p
+ VJ=0.75
+ M=.072
+ FC=0.5
+ TT=4E-9
+ BV=105
+ TBV1=0.0005
+ ISR=10e-9
+ NR=2.02
+ EG=1.12
+ IBV=0.001
+ KF=0
+ AF=1
+ IBV=1e-10)
L1 1 3 1.0n
L2 4 2 0.5n
D1 3 4 PN
.ENDS