* Technology: DISCRETE DEVICE 
* Device: BAV21 
* Description: Silicon Epitaxial Planar Diode 
* Type: Typical (nom) 
* Subcircuit: 05.05.1998, S.Reuter, TM1iCP224-HN 
* Remarks: 
* Revision: 05.05.1998 
* Simulation Model: Macro Model 
* Simulator: PSPICE 
* Subcircuit Call: Xname n1 n2 BAV21 
* Node Assignments: a=Anode, c=Cathode 

.SUBCKT BAV21 a c
 DF a d DFOR
 CF a d 400f
 RF d c 480m
 DR a c DREV
 VB c b 250
 DB b a DBRE 
.MODEL DFOR D
 + IS = 4.4n  RS = 0  N  =  1.9 IKF= 75m
 + CJO= 270f VJ = 1.3 M = 100m TT = 70n 
 + FC = 700m XTI= 2.5 EG =1.186 
 + IS =  10n  N  = 20 XTI= 400 EG =1.186 
 + IS = 100p  N  = 5 EG =1.186 

.MODEL DREV D
.MODEL DBRE D
.ENDS BAV21