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* Copyright:                   *
* Vishay Intertechnology, Inc. *
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* Technology:        DISCRETE DIODE
* Device:            Rectifier Diode BY 203 20S
* Description:
* Type:              Typical (nom)
* Subcircuit:       03.03.1997, by S.Reuter
* Remarks:
* Revision:          03.03.1997
* Simulation Model:  Macro Model
* Simulator:         PSPICE
* Subcircuit Call:	Xname n1 n2 BY20320S
* Node Assignments:	a=Anode, c=Cathode

.SUBCKT BY20320S a c

 DF a c DFOR
 DR a c DREV

.MODEL DFOR D
 + IS = 200p  RS = 350m  N  =  2.5  IKF=   5m
 + CJO=16.4p  VJ = 950m  M  = 355m  FC = 700m
 + TT =   780n  XTI=    35  EG =1.186

.MODEL DREV D
 + IS =  5n  N  =    5  XTI=   70  EG =1.186

.ENDS BY20320S