********************************
* Copyright:                   *
* Vishay Intertechnology, Inc. *
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BY268 

BY 268 

* Technology: DISCRETE DIODE 
* Device: Rectifier Diode BY 268 
* Description: 
* Type: Typical (nom) 
* Model established: 02.12.1996, by S.Reuter, TM1iC63-HN 
* Wafer: 
* Remarks: 
* Revision: 02.12.1996 
* Simulation Model: Macro Model 
* Simulator: PSPICE 
.SUBCKT BY268 a c

 DF a c DFOR

 DR a c DREV 

.MODEL DFOR D

 + IS = 550p RS = 350m N = 1.3 IKF= 1m 
+ CJO=30.6p VJ = 500m M = 400m FC = 700m 
+ TT = 1u XTI= 1 EG =1.186 
.MODEL DREV D

 + IS = 10n N = 5 XTI= 40 EG =1.186 
.ENDS BY268 

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