******************************** * Copyright: * * Vishay Intertechnology, Inc. * ******************************** BYT53 BYT53 * Technology: DISCRETE DIODE * Device: Rectifier Diode BYT 53 G * Description: * Type: Typical (nom) * Model established: 02.12.1996, by S.Reuter, TM1iC63-HN * Wafer: * Remarks: * Revision: 02.12.1996 * Simulation Model: Macro Model * Simulator: PSPICE .SUBCKT BYT53G a c DF a c DFOR DR a c DREV .MODEL DFOR D + IS = 200p RS = 400m N = 1.2 IKF= 50m + CJO= 50p VJ = 500m M = 343m FC = 700m + TT = 120n XTI= -2 EG =1.186 .MODEL DREV D + IS = 10n N = 5 XTI= 40 EG =1.186 .ENDS BYT53G Seite 1