********************************
* Copyright:                   *
* Vishay Intertechnology, Inc. *
********************************
* Technology: DISCRETE Zener DIODE
* Device: Diode 
* Description:
* Type: Typical (nom)
* Model established: 30.06.2005, by Harald Stix, VSA/ASSP-VOE
* Wafer:
* Remarks:
* Revision: 30.06.2005
* Simulation Model: 
* Simulator: PSPICE

*BeginParam
*IS=12.149E-12 (10.000E-21,.1,0)
*N=1.6848 (.2,5,0)
*RS=36.289E-3 (1.0000E-6,100,0)
*IKF=.21071 (0,1.0000E3,0)
*XTI=3 (-100,100,0)
*EG=1.1100 (.1,5.5100,0)
*CJO=445.10E-12 (10.000E-21,1.0000E-3,0)
*M=.32858 (.1,10,0)
*VJ=.51582 (.3905,10,0)
*FC=.5 (1.0000E-3,10,0)
*ISR=408.54E-9 (10.000E-21,.1,0)
*NR=2.9738 (.5,5,0)
*BV=110.02 (.1,1.0000E6,0)
*IBV=23.958E-3 (1.0000E-9,10,0)
*TT=2.0964E-6 (100.00E-18,1.0000E-3,0)
*EndParam

*DEVICE=BZW03D100,D

* BZW03D100 D model
* created using Parts release 8.0 on 30.06.2005
* Parts is a MicroSim product.
.MODEL BZW03D100 D
+ IS=12.149E-12
+ N=1.6848
+ RS=36.289E-3
+ IKF=.21071
+ CJO=445.10E-12
+ M=.32858
+ VJ=.51582
+ ISR=408.54E-9
+ NR=2.9738
+ BV=110.02
+ IBV=23.958E-3
+ TT=2.0964E-6
*$