********************************
* Copyright:                   *
* Vishay Intertechnology, Inc. *
********************************
*Jan 23, 2017
*ECN S17-0112, Rev. B
*File Name: SiHP8N50D_PS.txt and SiHP8N50D_PS.lib
*This document is intended as a SPICE modeling guideline and does not
*constitute a commercial product datasheet. Designers should refer to the
*appropriate datasheet of the same number for guaranteed specification
*limits.
.SUBCKT SiHP8N50D D G S 
M1 3 GX S S  NMOS W= 475688u  L= 1u 
M2 S GX S D  PMOS W= 475688u  L= 2.118e-06 
M2B S GX S 3 PMOS2 W= 475688u L= 2.118e-06 
R1 D 4 3.153e-02 TC=5.377e-02,-9.571e-05
RLK 3 S 1.6e9 
J1 4 S 3 JD 475688u 
.MODEL JD NJF (VTO = -1.600e+01 BETA = 1.144e-01 LAMBDA = 1.653e-02 
+BETATCE = -1.081e+00 VTOTC = -0.06566 IS = 1e-18 N = 10 )
CGS GX S 4.265e-10 
CGD GX D 3.205e-12 
RG G GY 1.8
RTCV 100 S 1e6 TC=6.432e-03,-2.505e-05
ETCV GX GY 100 200 1 
ITCV S 100 1u 
VTCV 200 S 1 
DBD S D DBD 
**************************************************************** 
.MODEL NMOS NMOS ( LEVEL = 3 TOX = 15e-8 
+ RS = 0 KP = 6.594e-06 NSUB = 5.060e+16 
+ KAPPA = 4.393e-01 NFS = 4.553e+11 
+ LD = 0 IS = 0 TPG = 1    )
*************************************************************** 
.MODEL PMOS PMOS ( LEVEL = 3 TOX = 15e-8 
+NSUB = 3.057e+14 IS = 0 TPG = -1    )
.MODEL PMOS2 PMOS ( LEVEL = 3 TOX = 15e-8 
+NSUB = 9e15 IS = 0 TPG = -1    )
**************************************************************** 
.MODEL DBD D ( 
+FC = 0.1 TT = 1.04e-6 T_measured = 25 BV = 501
+RS = 5.833e-03 N = 1.577e+00 IS = 6.563e-09 
+EG = 1.217e+00 XTI = 4.116e-01 TRS1 = 4.110e-03
+CJO = 1.026e-09 VJ = 6.258e-01 M = 6.026e-01 ) 
.ENDS 
