********************************
* Copyright:                   *
* Vishay Intertechnology, Inc. *
********************************
*Aug 29, 2016
*ECN S16-1681, Rev. A
*File Name: SiHG15N60E_PS.txt and SiHG15N60E_PS.lib
*This document is intended as a SPICE modeling guideline and does not
*constitute a commercial product datasheet. Designers should refer to the
*appropriate datasheet of the same number for guaranteed specification
*limits.
.SUBCKT SiHG15N60E D G S 
M1 3 GX S S NMOS W= 1373416u L= 2u 
M2 S GX S D PMOS W= 1373416u L= 0.565u
M2B S GX S 3 PMOS2 W= 1373416u L= 2.5u 
R1 4 3 1.631e-01 TC=8.346e-03,3e-5
J1 D S 4 JD 1373416u 
.MODEL JD NJF (VTO = -12.980e+00 BETA = 6.37e-01 LAMBDA = 2e-02 
+BETATCE = -15.155e-01 VTOTC = -0.07 IS = 1e-18 N = 10 )
CGS GX S 5.652e-10 
CGD GX D 12.451e-12 
RG G GY 1m 
RTCV 100 S 1e6 TC=3.768e-03,0
ETCV GX GY 100 200 1 
ITCV S 100 1u 
VTCV 200 S 1 
DBD S D DBD 1373416u 
**************************************************************** 
.MODEL NMOS NMOS ( LEVEL = 3 TOX = 10e-8 
+ RS = 0 KP = 7.910e-06 NSUB = 7.268e+16 
+ KAPPA = 7.548e-02 NFS = 1.000e+12 
+ LD = 0 IS = 0 TPG = 1  )
*************************************************************** 
.MODEL PMOS PMOS ( LEVEL = 3 TOX = 10e-8 
+NSUB = 1.872e+14 IS = 0 TPG = -1    )
.MODEL PMOS2 PMOS ( LEVEL = 3 TOX = 10e-8 
+NSUB = 4e15 IS = 0 TPG = -1  )
**************************************************************** 
.MODEL DBD D ( 
+FC = 0.1 TT = 1.2e-06 T_measured = 25 BV = 601
+RS = 7.842e-03 N = 1.661e+00 IS = 15.261e-09 
+EG = 1.189e+00 XTI = 2.022e-00 TRS1 = 2.934e-03
+CJO = 2.858e-09 VJ = 2.227e+00 M = 9.0999e-1 ) 
.ENDS 
