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TSHG5510 product information
High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero

 TSHG5510 Datasheet

Features

  • Package type: leaded
  • Package form: T-1¾
  • Dimensions (in mm): Ø 5


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Datasheet
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Product Sheet - 830 nm, 850 nm, 870 nm Infrared Emitters
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