High-Performance Gen 5.0 Schottky Diodes, 20 A

Industry's First 40-V Diode in D-PAK with Current to 20 A

Features:

• T_jmax = 175 °C
• Very low forward voltage drop (V_F max: 0.530 V @ 20 A, 125 °C)
• Extremely low reverse leakage (I_R max: 7 mA @ 45 V, 125 °C)
• Optimized V_F vs. I_R trade-off for high efficiency
• Increased ruggedness for reverse avalanche capability
• RBSOA available
• Negligible switching losses
• Sub-micron trench technology

Applications:

• Photovoltaic cell bypass diodes
• High-efficiency SMPS
• Automotive (AEC-Q101 qualified)
• High-frequency switching
• Output rectification
• Reverse battery protection

More Information
 20WT04FN
Press Release

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