Vishay - Trench IGBT Platform
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Trench IGBT Platform
Trench PT and FS IGBT Platform
in 4 Die Sizes
New Trench PT and FS IGBT Platform
  • Offering includes one Trench PT and six Trench FS IGBTs
  • Low collector-to-emitter voltages down to 1.07 V at 50 % rated current and +125 °C provide extremely low conduction losses
  • Trench PT devices optimized for low switching frequencies to 1 kHz
  • Trench FS IGBTs offer 6 µs short circuit rating and high operating temperatures to +175 °C
  • Feature collector current ratings from 30 A to 240 A
  • Breakdown voltages of 600 V and 650 V for increased reliability
  • Trench construction offers smaller size than planar devices
  • Optimized for use with Vishay's new FRED Pt® Gen 4 Ultrafast soft diodes
FRED Pt® Gen 4
Reduce Conduction Losses and Increase Efficiency
FRED Pt® Gen 4 Ultrafast Diodes
  • Gen 4 FRED Pt technology
  • Low IRRM and reverse recovery charge
  • Ultrasoft recovery in any switching conditions
  • Ultra-low forward voltage down to 1.4 V
  • Ultrafast reverse recovery times down to 25 ns
  • Polyimide passivated chip for high reliability
  • High operating temperature to +175 °C
  • RoHS-compliant
For more information on Vishay Semiconductors' Trench IGBT and FRED Pt® Gen 4, please contact diewafer@vishay.com.