MOSFET FEA Thermal Simulation Tool

• Save simulations for further use & modifications
• Modeling for MOSFETs can include effect of other heat dissipating components
• Setups include: power profile, heat sink, PCB, system temp., air flow and more
• PDF report supplied with thermal images and temp data downloadable to Excel

Co-packaged MOSFETs reduce space while still obtaining low on-resistance and high current comparable to two discretes

• High- and low-side MOSFETs in one 6-mm x 3.7-mm package
  • On-resistance down to 5.8 mΩ
  • Maximum current up to > 17 A
• Lowers solution space and cost over two discrete MOSFETs, saving clearance and labeling space between them
• Simplifies layout
• Reduces parasitic inductance from PCB traces, increasing efficiency and reducing ringing

New Breakthrough Technology Lowers On-Resistance up to 40 % While Improving Gate Charge

• Record-breaking maximum on-resistance at V_GS = 4.5 V rating is up to 35 % lower - Down to 0.0017 Ω
• Maximum on-resistance at V_GS = 10 V is also up to 40 % lower - Down to 0.0012 Ω
• Figure of Merit (FOM) of on-resistance times gate charge up to 42 % lower - Down to 85 mΩ-nC

Integrated MOSFET and Schottky Diode Solution Increases Efficiency

• Both components on one monolithic chip reduces on-resistance
• Reduces body diode power losses
• Eliminates external Schottky diode for space and solution cost savings
• Ideal low-side switch for synchronous rectification

PolarPAK^® Brings Standard Packaging to Double-Sided Cooling

• Dual heat dissipation paths double current density (> 60 A)
• Standard packaging provides better die protection, reliability and easier manufacturing handling
• 20-V to 200-V devices
• Fixed footprint and pad layout across family, ≤ 100 V and ≥ 150 V
• Licensed by multiple sources

Replaces TSOP-6 and SO-8 MOSFETs for lower thermal resistance and smaller footprints

• Compact 3-mm by 1.8-mm footprint
• 3-W maximum power dissipation
• Single, dual, co-packaged n- and p-channel and MOSFET + Schottky versions
• Breakdown voltage ratings from 8 V to 20 V for p-channel and 20 V to 60 V for n-channel

OR-ing Power MOSFETs

• 20-V V_DS / 20-V V_GS
• Industry-lowest on-resistance in three SO-8 footprint package options
  • Up to 36 % lower on-resistance for 20 V in SO-8 footprint area
  • 1.6 mΩ for double-sided cooling in air-flow applications
  • 2.4 mΩ for optimum heat dissipation in still air
  • 2.8 mΩ in standard SO-8 package

Breakthrough P-Channel Technology Dramatically Cuts r_DS(on)

• Lowest on-resistance per area achieved for a p-channel provides on-resistance down to half of previous industry best
  • Down to sub 2 mΩ in SO-8 footprint area
  • Variety of package sizes, from PowerPAK SO-8 down to 1.6 mm x 1.6 mm PowerPAK SC-75
  • Low conduction losses save power in battery operated systems

Industry-First MOSFETs with On-Resistance Rated at V_GS = 1.2 V

• Optimized for use with the low-voltage core ICs
• Allow the driver voltage to turn on the switch from a lower output voltage than 1.8 V
• Help reduce power consumption and increase battery usage time
• Single n- and p-channel device options
• Footprints as small as 1.2 mm x 1 mm

2-mm x 2-mm Footprint Area is 50% that of the TSOP-6

• Comparable on-resistance, down to 11 mΩ
• Low 0.8-mm profile is ¼ smaller than TSOP-6
• 75 % higher maximum power dissipation
• Includes devices with on-resistance ratings down to 1.2-V

Ultra-Low On-Resistance and Size

• PowerPAK SC-75 provides same 1.6-mm x 1.6-mm footprint as standard SC-75, but much lower on-resistance
  • N-channel r_DS(on) as low as 0.026 Ω
  • P-channel r_DS(on) as low as 0.035 Ω
• Single and dual n- and p-channel versions available, including devices with on-resistance ratings down to 1.2-V
• Gives designers ultra-low on-resistance and ultra-small size in one device for saving power in space-constrained handheld applications

Industry's Smallest MOSFETs, Lowest On-Resistance for Chipscale Packaging

• Footprints of 1.5 mm x 1 mm, 1.2 mm x 1 mm, and 1 mm x 1 mm
• Smallest height of 0.59 mm
• Lowest on-resistance for form factor
• Help reduce power consumption and increase battery usage time

Industry’s First 190 V N-Channel Power MOSFET Plus Co-Packaged 190-V Power Diode

• SiA850DJ combines 190-V MOSFET and 190-V diode in compact 2-mm by 2-mm footprint and ultra-thin 0.75-mm profile
• Saves designers at least one third of the PCB area, while lowering solution costs by eliminating the need for an external diode
• Industry’s first such device with an on-resistance rating at 1.8-V V_GS
• On-resistance from 17 Ω at 1.8-V V_GS to 3.8 Ω at 4.5-V V_GS, diode forward voltage of 1.2 V at 0.5 A
• Ideal for boost dc-to-dc converters for high-voltage piezoelectric motors and OLED backlighting in cell phones, PDAs, MP3 players, and other portable devices

Industry’s Smallest 20-V N-Channel Power MOSFET and Schottky Diode

• SiB800EDK combines power MOSFET and Schottky diode in ultra-small PowerPAK^® SC-75 package with 1.6-mm by 1.6-mm footprint and thin 0.75-mm profile
• Low on-resistance values from 0.960 Ω at 1.5-V V_GS to 0.225 Ω at 4.5-V V_GS
• Low r_DS(on) rating at 1.5 V enables use with signals at low levels
• Schottky V_F = 0.32 V at 100 mA