MENU

VS-GA200SA60UP product information

Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 100 A

 VS-GA200SA60UP Datasheet

FEATURES

  • Ultrafast: optimized for minimum saturation voltage and speed up to 30 kHz in hard switching, > 200 kHz in resonant mode
  • Very low conduction and switching losses
  • Fully isolate package (2500 VAC/RMS)


Check all PDF documents

Documents

Datasheet
Application Notes
Application Note - Mounting Instructions for SOT-227 Modules
Package Drawings
Outline Dimensions - SOT-227 Generation II
Packaging Information
Packaging Information - SOT-227 Generation II
Product Literature
Miscellaneous - IGBT Modules (600 V, 650 V and 1200 V, 50 A to 250 A) in SOT-227 Package
Selector Guide - Power Modules: Standard Recovery Diode, Fast Recovery Diode, Schottky, Ultrafast, Thyristor, and IGBT
Published Articles
Article - High Power and Hybrid Vehicles Increase Demand for Load Dump Protection by Soo Man (Sweetman) Kim (Autoelectronics.com, Oct 16 2008)
Product Support
Technical Questions
Vishay engineers can answer questions about product quality, performance, and specifications.

If you haven't already registered, you must register to submit a request.

* Subject
* Message

Javascript must be enabled


Contact UsSales, Authorized Distributors
Technical Questions...
Contact Us
Buy Now Check Distributor Stock Part Number/Keyword
Useful Links