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VS-GT80DA60U product information

Insulated Gate Bipolar Transistor (Trench IGBT), 600 V, 600 A

 VS-GT80DA60U Datasheet

FEATURES

  • High speed trench gate field-stop IGBT positive temperature coefficient
  • TJ maximum = 175 C
  • FRED Pt anti-parallel diodes with ultrasoft reverse recovery


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Datasheet
Package Drawings
Outline Dimensions - SOT-227 Generation II
Packaging Information
Packaging Information - SOT-227 Generation II
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