New TrenchFET Gen III Lowers RDS(ON) While Improving Qg
- Maximum on resistance down to 0.002Ω at
VGS = 4.5 V and down to 0.00155 ohms at VGS = 10 V - Record breaking Figure of Merit (FOM) down to 87 mΩ-nC
- TurboFET™ option optimizes gate drain charge FOM down to 23 m Ohms - nC
More info > TrenchFET® Gen III
More info > TrenchFET® Gen III TurboFET™
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New breakthrough P-Channel technology dramatically cuts on-resistance
- First sub 2 mΩ p-channel MOSFET in SO-8 footprint area
- Down to 4 mΩ in 3.3 mm x 3.3 mm PowerPAK 1212-8
- Package sizes down to 2 mm x 2 mm PowerPAK SC-70
- Lead (Pb)-free, halogen-free and RoHS-compliant
Datasheets: TrenchFET Gen III P-Channel
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Half the Size of TSOP-6 without Compromising On-Resistance
- 2 mm x 2 mm footprint area is 1/2 TSOP-6 size
- 0.8-mm profile 1/4 smaller than TSOP-6
- On-resistance down to 11 mΩ
- On-resistance ratings down to 1.2 VGS
- 100% Lead-free, halogen free, RoHS compliant
More Info Datasheets: PowerPAK SC-70
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MOSFET FEA Thermal Simulation Tool
- Save simulations for further use & modifications
- Modeling for MOSFETs can include effect of other heat dissipating components
- Setups include: power profile, heat sink, PCB, system temp., air flow and more
- PDF report supplied with thermal images and temp data downloadable to Excel
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