New TrenchFET Gen III Lowers R_DS(ON) While Improving Qg

• Maximum on resistance down to 0.0017Ω at
  V_GS = 4.5 V and down to 0.0012 ohms at V_GS = 10 V
• Record breaking Figure of Merit (FOM) down to 85 mΩ-nC
• TurboFET™ option optimizes gate drain charge FOM down to 23 m Ohms - nC
  More info >  TrenchFET^® Gen III
  More info > TrenchFET^® Gen III TurboFET™
  More featured products

New breakthrough P-Channel technology dramatically cuts on-resistance

• First sub 2 mΩ p-channel MOSFET in SO-8 footprint area
• Down to 4 mΩ in 3.3 mm x 3.3 mm PowerPAK 1212-8
• Package sizes down to 1.6 mm x 1.6 mm PowerPAK SC-75
• Lead (Pb)-free, halogen-free and RoHS-compliant
  
  Datasheets: TrenchFET Gen III P-Channel
  More featured products

Co-packaged MOSFETs reduce space, comparable specs to two discretes

• High- and low-side MOSFETs in one 6 mm x 3.7 mm package
  • On-resistance down to 5.8 mΩ
  • Maximum current up to >17A
• Lowers solution space and cost over two discrete MOSFETs
• Simplifies layout, reduces parasitic inductance from PCB
  More Info        Datasheet: PowerPAIR™
  More featured products

MOSFET FEA Thermal Simulation Tool

• Save simulations for further use & modifications
• Modeling for MOSFETs can include effect of other heat dissipating components
• Setups include: power profile, heat sink, PCB, system temp., air flow and more
• PDF report supplied with thermal images and temp data downloadable to Excel

Product Overview >    Press Release >    Go to thermal simulation
More featured products