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To help minimize power consumption and increase battery life, many of
the ASICs found in portable electronics systems are designed to operate at
core supply voltages between 1.2 V and 1.3 V. Until now, however,
the lack of power MOSFETs with guaranteed turn-on operation below 1.8 V
has limited the options for designers who wanted to take advantage of
these low core supply voltages. The use of level-shifting circuitry with
1.5-V or 1.8-V MOSFETs adds complexity while increasing power consumption.
Even less desirable is using such MOSFETs in an unguaranteed region
without level shifting, where on-resistance tends to increase
exponentially and process tolerances can even lead to design
malfunction.
Vishay addresses these problems with breakthrough power MOSFETs that
work directly from 1.2-V and 1.5-V core supply voltages with on-resistance
as low as 41 milliohms. With their low threshold voltage and guaranteed
specifications at a 1.2-V (or 1.5-V) gate drive, these devices eliminate
the need for level-shifting circuitry and maximize the power-saving
benefits of low operating voltages in battery-operated systems.
Vishay's 1.2-V and 1.5-V MOSFET families include single n- and p-channel
devices in packages as small as 1.6 mm x 1.6 mm (PowerPAK® SC-75) as
well
as in the chipscale MICRO FOOT® format.
1.2V rated
on-resistance MOSFETs Selector Page
1.5V rated
on-resistance MOSFETs Selector Page
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