• Advanced thermal performance in a compact 3-mm by 1.8 mm footprint
• 3 W maximum power dissipation for high thermal efficiency
• Available in single, dual, co-packaged n- and p-channel, and MOSFET + Schottky versions
• Breakdown voltage ratings from 8 V to 20 V for p-channel and 20 V to 60 V for n-channel

PowerPAK ChipFET provides a smaller-footprint alternative to MOSFETs in the TSOP-6 and SO-8 packages.

Compared to devices in the TSOP-6, new PowerPAK ChipFET devices feature 75 % lower thermal resistance values, a 33 % smaller footprint area, and a 25 % thinner height profile (0.8 mm). Enabling longer on-times in portable devices, p-channel PowerPAK ChipFETs will be used to replace load, PA, charger, and battery MOSFET switches in the TSOP-6.

The 3-W maximum power dissipation of the PowerPAK ChipFET package is actually the same as the much larger SO-8, allowing n-channel PowerPAK ChipFETs to replace SO-8 MOSFETs in certain point-of-load, fixed-telecom synchronous rectification, and low-power computer dc-to-dc conversion applications. Additionally, the p-channel plus Schottky diode version will be used in asynchronous dc-to-dc applications, such as those found in hard disk drives and game consoles, to replace devices in the SO-8.

With their low conduction losses and enhanced thermal efficiency, power MOSFETs in Vishay's new PowerPAK ChipFET family are pin-compatible with products in the standard ChipFET package.

PowerPAK® ChipFET® Datasheets

Power PAK ChipFET MOSFETs can be identified with Si5xxxDU part numbers.