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Vishay Intertechnology’s SiZ710DT 20 V N-Channel PowerPAIR® Power MOSFET Honored With 2012 China ACE Award

November 14, 2011

Vishay Siliconix PowerPAIR® Dual Asymmetric Power MOSFET Family Expands to Three Size Options, Including 3 mm x 3 mm

February 10, 2011

Vishay Siliconix Dual 20 V P-Channel TrenchFET® Gen III Power MOSFET Offers Industry’s Lowest On-Resistance Down to 54 mΩ at 4.5 V in the 2 mm by 2 mm Footprint Area

November 11, 2010

Vishay Siliconix Releases Industry’s First Asymmetric Dual TrenchFET® Power MOSFET in PowerPAIR® 6 mm by 3.7 mm Package Featuring TrenchFET Gen III Technology

April 08, 2010

Vishay Siliconix Extends P-Channel TrenchFET® Gen III Technology to Dual 12-V Power MOSFET; New Device Lowers On-Resistance Up to 32 % in 2-mm by 2-mm Footprint Area

September 10, 2009

Latest Vishay Siliconix Billion-Cell Per Square Inch P-Channel TrenchFET® Gen III Power MOSFET Offers Industry-Low On-Resistance in PowerPAK® SC-75

April 30, 2009

Vishay Siliconix Extends P-Channel TrenchFET® Gen III Technology to Ultra-Small Packages, Lowering On-Resistance Up to 44 % With New Dual 20-V Power MOSFET in 2-mm by 2-mm Footprint Area

August 20, 2008

New Vishay Siliconix 8-V to 30-V P-Channel PowerPAK SC-75 Power MOSFETs Feature On-Resistance as Low as 0.052 Ohms in 1.6-mm by 1.6-mm Footprint Area

January 15, 2007

New Vishay Silconix N-Channel PowerPAK® ChipFET® MOSFETs Offer Same 3-W Maximum Power Dissipation as Larger SO-8 in 81 % Smaller Footprint

November 21, 2005

New Vishay Siliconix Power MOSFETs in Thermally Enhanced PowerPAK 1212 8 Package Combine 3.3-mm by 3.3-mm Footprint, Thermal Resistance of Less Than 2 Degrees Celsius Per Watt, and On-Resistance Values Down to 3.7 Milliohms

April 21, 2003

Siliconix Launches Complete Family of TrenchFET® Power MOSFETs Built on Advanced P-Channel Technology