Record-Breaking Maximum On-Resistance Values Under 4 m in the SO-8 Footprint for DC/DC Conversion

• First TrenchFET to break the 4-milliohm barrier at 4.5V in the SO-8 footprint
• Higher efficiency for reduced power consumption and prolonged battery life in end systems
• Extremely low Qgd/Qgs ratio provides substantial shoot-thru protection
  
• Reduce on-resistance and conduction losses further by allowing systems to run cooler
  • Show a gain of nearly 1% in efficiency and a 7°C reduction in device temperature during testing in a typical application
• High-performing, cost-effective solution that simplifies manufacturing process

TrenchFET® Gen II selector guide

Target Applications

• DC/DC converters in notebook computers
• Synchronous rectification in fixed telecom power supplies

More About TrenchFET Gen II

Products built on TrenchFET Gen II technology are based on a 300-million-cells-per-square-inch platform offering a specific on-resistance of 12 milliohms per square mm, a 30% improvement over previous-generation silicon. In addition to its higher cell density, TrenchFET Gen II uses a new stripe topology that reduces mask count by 28%, optimizing turnaround and reducing costs.

Siliconix was industry's first supplier to introduce Trench power MOSFETs. The company's TrenchFET IP includes numerous patents, including fundamental technology patents dating from the early 1980s.