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February 13,
2012
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New Vishay Siliconix 30 V P-Channel Chipscale MOSFETs Industry’s Lowest On-Resistance for 30 V in 1.6 mm by 1.6 mm Size
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February 10,
2011
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Vishay Siliconix Dual 20 V P-Channel TrenchFET® Gen III Power MOSFET Offers Industry’s Lowest On-Resistance Down to 54 mΩ
at 4.5 V in the 2 mm by 2 mm Footprint Area
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May 03,
2010
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Vishay Siliconix Introduces First 30-V P-Channel TrenchFET® Gen III Power MOSFET in PowerPAK® 1212-8 Package
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April 23,
2010
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Vishay Siliconix Introduces First P-Channel TrenchFET® Gen III Power MOSFET in Chipscale MICRO FOOT® Package
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April 08,
2010
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Vishay Siliconix Extends P-Channel TrenchFET® Gen III Technology to Dual 12-V Power MOSFET; New Device Lowers On-Resistance
Up to 32 % in 2-mm by 2-mm Footprint Area
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December 21,
2009
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Vishay Siliconix 12-V P-Channel TrenchFET® Gen III Power MOSFET Offers Industry’s Lowest On-Resistance From 27 mΩ at 4.5 V
to 130 mΩ at 1.5 V in Ultra-Small 1.6-mm by 1.6-mm Footprint Area
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November 18,
2009
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Vishay Siliconix 20-V P-Channel TrenchFET® Gen III Power MOSFET Offers Industry’s Lowest On-Resistance From 18 mΩ at 4.5 V
to 65 mΩ at 1.8 V in Compact 2-mm by 2-mm Footprint Area
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September 10,
2009
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Latest Vishay Siliconix Billion-Cell Per Square Inch P-Channel TrenchFET® Gen III Power MOSFET Offers Industry-Low On-Resistance
in PowerPAK® SC-75
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June 25,
2009
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Vishay Siliconix 30-V P-Channel TrenchFET® Gen III Power MOSFET Sets New Industry First with 2.6-mΩ Maximum On-Resistance
in SO-8 Footprint Area
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May 11,
2009
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Vishay Siliconix Releases New 20-V P-Channel TrenchFET® Gen III Power MOSFET With Industry’s Lowest On-Resistance for 3.3-mm
by 3.3-mm Footprint Area of 3.9 mΩ at 10 V, 5.5 mΩ at 4.5 V, and 9.8 mΩ at 2.5 V
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April 30,
2009
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Vishay Siliconix Extends P-Channel TrenchFET® Gen III Technology to Ultra-Small Packages, Lowering On-Resistance Up to 44
% With New Dual 20-V Power MOSFET in 2-mm by 2-mm Footprint Area
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March 04,
2009
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Vishay Siliconix Releases New 20-V P-Channel TrenchFET® Gen III Power MOSFET With Industry’s Lowest On-Resistance for SO-8
Footprint of 1.9 mΩ at 10 V and 2.5 mΩ at 4.5 V
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