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Related press releases
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April 30,
2012
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Next-Generation 400 V, 500 V, and 600 V Vishay Siliconix N-Channel Power MOSFETs Offer Ultra-Low On-Resistance Down to 0.130
Ω, FOM Down to 7.65 Ω-nC, and Currents From 3 A to 36 A
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October 12,
2011
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New Vishay Siliconix 600 V and 650 V N-Channel Power MOSFETs Feature Currents From 22 A to 47 A and Ultra-Low Maximum On-Resistance
Down to 64 mΩ
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October 14,
2010
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New 500-V Vishay Siliconix N-Channel Power MOSFETs Feature Low 0.38 Ω On-Resistance and Improved Gate Charge of 68 nC in TO-220AB,TO-220
FULLPAK, D²PAK, and TO-247AC Packages
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July 12,
2010
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New 500-V Vishay Siliconix N-Channel Power MOSFETs Feature Low 0.555-Ω On-Resistance and Improved Gate Charge of 48 nC in
TO-220,TO-220 FULLPAK, and D²PAK Packages
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April 01,
2010
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New 500-V Vishay Siliconix N-Channel Power MOSFET Features Low trr of 63 ns, Qrr of 114 nC, and On-Resistance of 1.0 O at
10 V
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October 16,
2009
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Vishay’s New 1-mm by 1-mm Maximum MICRO FOOT® Devices Are Industry’s Smallest Chipscale MOSFETs; Include First Device Under
1.2 mm2 with 12-V Gate-to-Source Voltage
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July 29,
2009
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New 500-V Vishay Siliconix Power MOSFETs Feature 0.270-Ω On-Resistance in TO-220, TO-220F, and TO-247 Packages
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January 07,
2009
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Vishay Siliconix Releases Industry’s First 190-V N-Channel Power MOSFET Plus 190-V Co-Packaged Power Diode With Compact 2-mm
by 2-mm Footprint and Low 0.75-mm Profile
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December 12,
2008
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Vishay Siliconix Releases New 20-V N-Channel Power MOSFET Plus Schottky Diode With Industry’s Smallest Footprint of 1.6 mm
by 1.6 mm
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August 20,
2008
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New Vishay Siliconix 8-V to 30-V P-Channel PowerPAK SC-75 Power MOSFETs Feature On-Resistance as Low as 0.052 Ohms in 1.6-mm
by 1.6-mm Footprint Area
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October 10,
2007
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Next-Generation Vishay Siliconix P-Channel TrenchFET® Power MOSFETs Offer Industry-Low On-Resistance Down To 29 Milliohms
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January 15,
2007
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New Vishay Silconix N-Channel PowerPAK® ChipFET® MOSFETs Offer Same 3-W Maximum Power Dissipation as Larger SO-8 in 81 % Smaller
Footprint
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November 21,
2005
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New Vishay Siliconix Power MOSFETs in Thermally Enhanced PowerPAK 1212 8 Package Combine 3.3-mm by 3.3-mm Footprint, Thermal
Resistance of Less Than 2 Degrees Celsius Per Watt, and On-Resistance Values Down to 3.7 Milliohms
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April 27,
2005
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New Vishay Siliconix -150-V and -200-V P-Channel Power MOSFETs Save Space for Active Clamp Configurations
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April 07,
2004
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Vishay Launches 240-Milliohm, 200-V Switching MOSFET in 3.3-mm by 3.3-mm PowerPAK® 1212-8
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January 28,
2004
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Vishay's New 250-V N-Channel TrenchFET® Power MOSFETs Offer Up to 50% Improved On-Resistance in SO-8 and D2PAK Footprints
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May 24,
2001
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New TrenchFET® MOSFETs Break Performance Records in Tiny LITTLE FOOT® SC-89 and SC-75 Packages
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