New 600-V MOSFETs Feature Ultra-Low 0.190-Ω On-Resistance in Four Package Options
Vishay Intertechnology, Inc. (NYSE: VSH) introduces the new SiHP22N60S, SiHF22N60S, SiHG22N60S, and SiHB22N60S 600-V MOSFETs, which extend its Super Junction FET® technology to the TO-220, TO-220F, TO-247, and TO-263 packages.
Product Benefits
- Four package options
- Ultra-low 0.190 Ω maximum on-resistance at a 10-V gate drive
- Lowers conduction losses and saves energy
- Low FOM of 18.62 Ω*nC
- Provide reliable operation
- 100 % avalanche tested
- High repetitive (EAR) avalanche energy capabilities
- Effective output capacitance specification
- Compliant to RoHS Directive 2002/95/EC
Market Applications
- Power factor correction (PFC) and pulsewidth modulation (PWM) applications in a wide range of electronic systems, including LCD TVs, PCs, servers, switch mode power supplies (SMPS), and telecom systems
Key Device Specifications
- 600-V VDS
- Packages:
- 0.190-Ω maximum on-resistance at 10 V
- 98-nC gate charge
- Gate charge times on-resistance of 18.62 Ω*nC
- 65-A pulsed and 22-A continuous peak current handling
The Perspective
Vishay's new SiHP22N60S, SiHF22N60S, SiHG22N60S, and SiHB22N60S Super Junction FET® power MOSFETs combine a 600-V rating with an ultra-low on-resistance at 10 V to lower conduction losses and save energy. Gate charge times on-resistance, a key figure of merit (FOM) for MOSFETs used in power conversion applications, is a low 18.62 Ω*nC. Compared to previous-generation 600-V power MOSFETs, the new devices offer improved transconductance and reverse recovery characteristics.
Vishay's SiHP22N60S offers higher efficiency than similar competing devices at a 400-W power load.
To access the product datasheets, go to:
Availability
Samples of the new Super Junction FET® MOSFETs are available now. Production quantities will be available in Q1 2010, with lead times of 8 to 10 weeks for larger orders.
Sales, Technical Questions...
