Sept. 24, 2008

Vishay Releases Industry’s First 30-V Monolithic Power MOSFET and Schottky Diode With Double-Sided Cooling

March 26, 2008

New 30-V TrenchFET Power MOSFET with Industry-Best Maximum 2.25-Milliohm On-Resistance at a 4.5-V Gate Drive Voltage is First Device in Vishay Siliconix TrenchFET® Gen III Family

November 07, 2007

Vishay TrenchFET® Power MOSFETs For OR-ing Applications Feature Industry-Best On-Resistance Down to 1.5 Milliohms in SO-8 Footprint Area with 20-V Drain-to-Source and Gate-to-Source Ratings

January 22, 2007

Vishay’s New 20-V to 40-V PolarPAK® Power MOSFETs Combine Thermal Benefits of Double-Sided Cooling Package with On-Resistance Down To 1.4 Milliohms

December 12, 2005

New Vishay Siliconix PolarPAK® Power MOSFETs With Double-Sided Cooling Offer On-Resistance Down to 1.9 Milliohms Maximum, Current Handling Up to 60 A in 5-mm by 6-mm Footprint

April 20, 2005

New Vishay Siliconix 40-V and 60-V MOSFETs Feature Industry's First Combination of High 3.4-V Threshold Voltage and Low 2.7-mΩ On-Resistance for High-Temperature Automotive Applications

March 29, 2004

Siliconix Targets Automotive 12-V Boardnet With New P-Channel −40-V and −60-V TrenchFET® Power MOSFETs