 |
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May 07,
2012
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Next-Generation TrenchFET® Gen IV 30 V N-Channel Power MOSFETs Feature On-Resistance Down to 1.0 mΩ at 10 V and 1.35 mΩ at
4.5 V
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April 30,
2012
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Next-Generation 400 V, 500 V, and 600 V Vishay Siliconix N-Channel Power MOSFETs Offer Ultra-Low On-Resistance Down to 0.130
Ω, FOM Down to 7.65 Ω-nC, and Currents From 3 A to 36 A
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April 26,
2012
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Vishay Intertechnology’s SiZ710DT 20 V N-Channel PowerPAIR® Power MOSFET Honored With 2012 China ACE Award
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March 26,
2012
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Vishay Intertechnology Announces “Super 12” Featured Products for 2012
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February 13,
2012
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New Vishay Siliconix 30 V P-Channel Chipscale MOSFETs Industry’s Lowest On-Resistance for 30 V in 1.6 mm by 1.6 mm Size
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December 19,
2011
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Vishay Siliconix TrenchFET® Power MOSFET Wins China Leading Electronic Product Award from AET Magazine
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December 05,
2011
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Vishay Intertechnology’s SiR870DP Power MOSFET and 34 THE Hall Effect Sensor Win EDN China 2011 Innovation Awards
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November 14,
2011
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Vishay Siliconix PowerPAIR® Dual Asymmetric Power MOSFET Family Expands to Three Size Options, Including 3 mm x 3 mm
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October 20,
2011
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Vishay Siliconix MICRO FOOT® N-Channel and P-Channel Power MOSFETs are Industry’s First to Feature On-Resistance Ratings Down
to 1.2 V in Industry’s Smallest Chipscale Package
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October 12,
2011
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New Vishay Siliconix 600 V and 650 V N-Channel Power MOSFETs Feature Currents From 22 A to 47 A and Ultra-Low Maximum On-Resistance
Down to 64 mΩ
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October 10,
2011
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Vishay Siliconix SiR662DP 60 V N-Channel TrenchFET® Power MOSFET Named as Top-10 DC/DC Power Product by Electronic Products
China Magazine
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August 15,
2011
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Vishay Siliconix 8 V P-Channel TrenchFET® Power MOSFET Offers Industry’s Lowest On-Resistance Down to 34 mΩ at 4.5 V in the
1.6 mm by 1.6 mm Footprint Area With Sub-0.8-mm Profile
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March 31,
2011
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New 40 V and 60 V Vishay Siliconix N-Channel TrenchFET® Power MOSFETs Feature Industry-Low On-Resistance and FOMs in PowerPAK
SO-8 Package
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March 29,
2011
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Vishay Intertechnology’s T97 and 597D Solid Tantalum Chip Capacitors and SiR880DP ThunderFET® 80 V N-Channel Power MOSFET
Named as Design News Golden Mousetrap Best Product Finalists
|
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March 28,
2011
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Vishay Intertechnology VCNL4000 Proximity and Ambient Light Optical Sensor and SiR880DP ThunderFET® 80 V Power MOSFET Honored
With EN-Genius Product of the Year Awards
|
|
February 28,
2011
|
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Vishay Siliconix Releases 30 V N-Channel and 20 V P-Channel TrenchFET® Power MOSFETs in Compact Thin PowerPAK® SC-70 Package
With Ultra-Slim 0.6 mm Profile
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February 24,
2011
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New 100 V Vishay Siliconix N-Channel TrenchFET® Power MOSFETs Featuring New ThunderFET® Technology Offer Lowest On-Resistance
at 4.5 V VGS Rating in SO-8 and PowerPAK® SO-8 Packages
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February 10,
2011
|
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Vishay Siliconix Dual 20 V P-Channel TrenchFET® Gen III Power MOSFET Offers Industry’s Lowest On-Resistance Down to 54 mΩ
at 4.5 V in the 2 mm by 2 mm Footprint Area
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January 17,
2011
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Vishay Siliconix 8 V P-Channel TrenchFET® Power MOSFET Offers Industry’s Lowest On-Resistance Down to 16 mΩ in PowerPAK® SC-70
2 mm by 2 mm Footprint Area
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November 11,
2010
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Vishay Siliconix Releases Industry’s First Asymmetric Dual TrenchFET® Power MOSFET in PowerPAIR® 6 mm by 3.7 mm Package Featuring
TrenchFET Gen III Technology
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November 08,
2010
|
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Vishay’s SiR880DP ThunderFET® Power MOSFET Named as Top-10 DC/DC Power Product by Electronic Products China Magazine
|
|
October 14,
2010
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New 500-V Vishay Siliconix N-Channel Power MOSFETs Feature Low 0.38 Ω On-Resistance and Improved Gate Charge of 68 nC in TO-220AB,TO-220
FULLPAK, D²PAK, and TO-247AC Packages
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July 26,
2010
|
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Vishay Siliconix Releases Industry’s Smallest and Thinnest N-Channel Chipscale Power MOSFET With 0.64-mm2 Area
|
|
July 12,
2010
|
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New 500-V Vishay Siliconix N-Channel Power MOSFETs Feature Low 0.555-Ω On-Resistance and Improved Gate Charge of 48 nC in
TO-220,TO-220 FULLPAK, and D²PAK Packages
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July 01,
2010
|
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New Vishay Siliconix ThunderFET™ Power MOSFET is Industry’s First 80-V MOSFET with On-Resistance Specified at 4.5-V Gate Drive,
with Value of 8.5 mΩ
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|
May 03,
2010
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Vishay Siliconix Introduces First 30-V P-Channel TrenchFET® Gen III Power MOSFET in PowerPAK® 1212-8 Package
|
|
April 23,
2010
|
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Vishay Siliconix Introduces First P-Channel TrenchFET® Gen III Power MOSFET in Chipscale MICRO FOOT® Package
|
|
April 08,
2010
|
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Vishay Siliconix Extends P-Channel TrenchFET® Gen III Technology to Dual 12-V Power MOSFET; New Device Lowers On-Resistance
Up to 32 % in 2-mm by 2-mm Footprint Area
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|
April 01,
2010
|
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New 500-V Vishay Siliconix N-Channel Power MOSFET Features Low trr of 63 ns, Qrr of 114 nC, and On-Resistance of 1.0 O at
10 V
|
|
December 21,
2009
|
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Vishay Siliconix 12-V P-Channel TrenchFET® Gen III Power MOSFET Offers Industry’s Lowest On-Resistance From 27 mΩ at 4.5 V
to 130 mΩ at 1.5 V in Ultra-Small 1.6-mm by 1.6-mm Footprint Area
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November 18,
2009
|
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Vishay Siliconix 20-V P-Channel TrenchFET® Gen III Power MOSFET Offers Industry’s Lowest On-Resistance From 18 mΩ at 4.5 V
to 65 mΩ at 1.8 V in Compact 2-mm by 2-mm Footprint Area
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October 16,
2009
|
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Vishay’s New 1-mm by 1-mm Maximum MICRO FOOT® Devices Are Industry’s Smallest Chipscale MOSFETs; Include First Device Under
1.2 mm2 with 12-V Gate-to-Source Voltage
|
|
September 10,
2009
|
|
Latest Vishay Siliconix Billion-Cell Per Square Inch P-Channel TrenchFET® Gen III Power MOSFET Offers Industry-Low On-Resistance
in PowerPAK® SC-75
|
|
August 21,
2009
|
|
Vishay Launches 60-V TrenchFET Power MOSFET with Industry-First 6.1 Milliohms On-Resistance in SO-8 Size Package
|
|
August 14,
2009
|
|
Vishay Siliconix Extends Family of N-Channel TrenchFET® Power MOSFETs in Compact PowerPAK® SC-75 Package to Offer 8-V to 30-V
VDS Range
|
|
August 10,
2009
|
|
Vishay’s New SkyFET® Monolithic Power MOSFET and Schottky Diode Achieves 3 Milliohms On-Resistance in SO-8 with TrenchFET®
Gen III Technology
|
|
July 29,
2009
|
|
New 500-V Vishay Siliconix Power MOSFETs Feature 0.270-Ω On-Resistance in TO-220, TO-220F, and TO-247 Packages
|
|
July 24,
2009
|
|
New Vishay Siliconix 12-V TrenchFET® Gen III Power MOSFET Features Industry-Best 1.2-mΩ Maximum On-Resistance at 10 V and
1.7 mΩ at 4.5 V
|
|
June 25,
2009
|
|
Vishay Siliconix 30-V P-Channel TrenchFET® Gen III Power MOSFET Sets New Industry First with 2.6-mΩ Maximum On-Resistance
in SO-8 Footprint Area
|
|
May 11,
2009
|
|
Vishay Siliconix Releases New 20-V P-Channel TrenchFET® Gen III Power MOSFET With Industry’s Lowest On-Resistance for 3.3-mm
by 3.3-mm Footprint Area of 3.9 mΩ at 10 V, 5.5 mΩ at 4.5 V, and 9.8 mΩ at 2.5 V
|
|
April 30,
2009
|
|
Vishay Siliconix Extends P-Channel TrenchFET® Gen III Technology to Ultra-Small Packages, Lowering On-Resistance Up to 44
% With New Dual 20-V Power MOSFET in 2-mm by 2-mm Footprint Area
|
|
April 01,
2009
|
|
Vishay Siliconix TrenchFET® Gen III Power MOSFETs Honored with EN-Genius Product of the Year Award
|
|
March 25,
2009
|
|
Vishay’s SiR440DP TrenchFET® Gen III Power MOSFET Chosen as Product of the Year by Electronic Products China Magazine
|
|
March 04,
2009
|
|
Vishay Siliconix Releases New 20-V P-Channel TrenchFET® Gen III Power MOSFET With Industry’s Lowest On-Resistance for SO-8
Footprint of 1.9 mΩ at 10 V and 2.5 mΩ at 4.5 V
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|
January 07,
2009
|
|
Vishay Siliconix Releases Industry’s First 190-V N-Channel Power MOSFET Plus 190-V Co-Packaged Power Diode With Compact 2-mm
by 2-mm Footprint and Low 0.75-mm Profile
|
|
December 17,
2008
|
|
Vishay Siliconix Releases New 20-V and 30-V P-Channel TrenchFET® Power MOSFETs With Industry’s Lowest On-Resistance in the
SO-8 Footprint Down to 3.3 mΩ at 10 V and 5.5 mΩ at 4.5 V
|
|
December 12,
2008
|
|
Vishay Siliconix Releases New 20-V N-Channel Power MOSFET Plus Schottky Diode With Industry’s Smallest Footprint of 1.6 mm
by 1.6 mm
|
|
December 03,
2008
|
|
Siliconix Releases First 20-V and 30-V N-Channel TrenchFET® Gen III Power MOSFETs With TurboFET™ Technology For Low Switching
Losses and Faster Switching
|
|
November 19,
2008
|
|
New Vishay Siliconix 20-V TrenchFET® Gen III Power MOSFET Features Industry-Best Maximum 2.0-mΩ On-Resistance at 4.5 V and
1.55 mΩ at 10 V
|
|
October 22,
2008
|
|
New Siliconix 25-V TrenchFET® Gen III Power MOSFET Features Industry-Best Maximum 2.1-mΩ On-Resistance at 4.5 V and 1.7 mΩ
at 10 V in PowerPAK® SO-8 Package
|
|
September 24,
2008
|
|
Vishay Releases Industry’s First 30-V Monolithic Power MOSFET and Schottky Diode With Double-Sided Cooling
|
|
August 20,
2008
|
|
New Vishay Siliconix 8-V to 30-V P-Channel PowerPAK SC-75 Power MOSFETs Feature On-Resistance as Low as 0.052 Ohms in 1.6-mm
by 1.6-mm Footprint Area
|
|
May 28,
2008
|
|
New Vishay Siliconix Power MOSFETs in Compact 2-mm by 2-mm PowerPAK® SC-70 Package Offer Half the Size of TSOP-6 With Comparable
On-Resistance Down to 11 mΩ
|
|
October 10,
2007
|
|
Next-Generation Vishay Siliconix P-Channel TrenchFET® Power MOSFETs Offer Industry-Low On-Resistance Down To 29 Milliohms
|
|
August 15,
2007
|
|
Vishay Launches Industry-First Power MOSFETs Specifying On-Resistance at 1.2-V Gate-to-Source Voltage
|
|
July 16,
2007
|
|
New Vishay Siliconix PowerPAK® ChipFET® Power MOSFETs Replace TSOP-6 Devices with 75 % Lower Thermal Resistance in 33 % Smaller
Footprint
|
|
January 22,
2007
|
|
Vishay’s New 20-V to 40-V PolarPAK® Power MOSFETs Combine Thermal Benefits of Double-Sided Cooling Package with On-Resistance
Down To 1.4 Milliohms
|
|
January 15,
2007
|
|
New Vishay Silconix N-Channel PowerPAK® ChipFET® MOSFETs Offer Same 3-W Maximum Power Dissipation as Larger SO-8 in 81 % Smaller
Footprint
|
|
November 21,
2005
|
|
New Vishay Siliconix Power MOSFETs in Thermally Enhanced PowerPAK 1212 8 Package Combine 3.3-mm by 3.3-mm Footprint, Thermal
Resistance of Less Than 2 Degrees Celsius Per Watt, and On-Resistance Values Down to 3.7 Milliohms
|
|
June 15,
2005
|
|
New Vishay Siliconix P-Channel Load Switches Are Industry's First Designed for On-Resistance Ratings at 1.5 V
|
|
April 27,
2005
|
|
New Vishay Siliconix -150-V and -200-V P-Channel Power MOSFETs Save Space for Active Clamp Configurations
|
|
August 11,
2004
|
|
Vishay's New Common-Drain MICRO FOOT® Power MOSFETs Offer On-Resistance Comparable to TSSOP-8 Devices in 81% Smaller Chipscale
Package
|
|
May 26,
2004
|
|
New Chipscale P-Channel MOSFET Sets New Record at 48 Milliohms
|
|
April 07,
2004
|
|
Vishay Launches 240-Milliohm, 200-V Switching MOSFET in 3.3-mm by 3.3-mm PowerPAK® 1212-8
|
|
March 29,
2004
|
|
Siliconix Targets Automotive 12-V Boardnet With New P-Channel −40-V and −60-V TrenchFET® Power MOSFETs
|
|
January 28,
2004
|
|
Vishay's New 250-V N-Channel TrenchFET® Power MOSFETs Offer Up to 50% Improved On-Resistance in SO-8 and D2PAK Footprints
|
|
July 16,
2003
|
|
Vishay's New 20-V VDS/20-V VGS MOSFETs Provide On-Resistance Down to 3.2 mΩ for Efficient Desktop and Server Core DC-to-DC
Converters
|
|
April 21,
2003
|
|
Siliconix Launches Complete Family of TrenchFET® Power MOSFETs Built on Advanced P-Channel Technology
|
|
October 04,
2002
|
|
New PowerPAK™ SO-8 Power MOSFETs Provide Industry-Best Specifications for Point of Load DC-to-DC Conversion Applications
|
|
August 07,
2002
|
|
New Vishay Siliconix Power MOSFETs For Battery Protection Set New Records for On-Resistance in Three Package Types
|
|
March 25,
2002
|
|
TrenchFETs® in New Thermally Enhanced D2PAK Package Save Board Space and Lower Costs With Industry's Best Thermal Performance
|
|
August 22,
2001
|
|
New Siliconix Power MOSFETs for Isolated DC/DC Conversion Meet Higher Voltage Demands in Low-Profile PowerPAK™ Package
|
|
May 24,
2001
|
|
New TrenchFET® MOSFETs Break Performance Records in Tiny LITTLE FOOT® SC-89 and SC-75 Packages
|
|
May 11,
2001
|
|
New LITTLE FOOT® Power MOSFETs for Isolated DC-to-DC Converters are PWM Optimized
|
|
July 12,
2000
|
|
New TrenchFETs® Set To Support 42-V Automotive Systems, Set Records for On-Resistance in TO-220 and D2PAK
|
|
Sales, Technical Questions...
