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May 07,
2012
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Next-Generation TrenchFET® Gen IV 30 V N-Channel Power MOSFETs Feature On-Resistance Down to 1.0 mΩ at 10 V and 1.35 mΩ at
4.5 V
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April 26,
2012
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Vishay Intertechnology’s SiZ710DT 20 V N-Channel PowerPAIR® Power MOSFET Honored With 2012 China ACE Award
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March 26,
2012
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Vishay Intertechnology Announces “Super 12” Featured Products for 2012
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December 19,
2011
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Vishay Siliconix TrenchFET® Power MOSFET Wins China Leading Electronic Product Award from AET Magazine
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December 05,
2011
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Vishay Intertechnology’s SiR870DP Power MOSFET and 34 THE Hall Effect Sensor Win EDN China 2011 Innovation Awards
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November 14,
2011
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Vishay Siliconix PowerPAIR® Dual Asymmetric Power MOSFET Family Expands to Three Size Options, Including 3 mm x 3 mm
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October 10,
2011
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Vishay Siliconix SiR662DP 60 V N-Channel TrenchFET® Power MOSFET Named as Top-10 DC/DC Power Product by Electronic Products
China Magazine
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March 31,
2011
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New 40 V and 60 V Vishay Siliconix N-Channel TrenchFET® Power MOSFETs Feature Industry-Low On-Resistance and FOMs in PowerPAK
SO-8 Package
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March 29,
2011
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Vishay Intertechnology’s T97 and 597D Solid Tantalum Chip Capacitors and SiR880DP ThunderFET® 80 V N-Channel Power MOSFET
Named as Design News Golden Mousetrap Best Product Finalists
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March 28,
2011
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Vishay Intertechnology VCNL4000 Proximity and Ambient Light Optical Sensor and SiR880DP ThunderFET® 80 V Power MOSFET Honored
With EN-Genius Product of the Year Awards
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February 24,
2011
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New 100 V Vishay Siliconix N-Channel TrenchFET® Power MOSFETs Featuring New ThunderFET® Technology Offer Lowest On-Resistance
at 4.5 V VGS Rating in SO-8 and PowerPAK® SO-8 Packages
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November 11,
2010
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Vishay Siliconix Releases Industry’s First Asymmetric Dual TrenchFET® Power MOSFET in PowerPAIR® 6 mm by 3.7 mm Package Featuring
TrenchFET Gen III Technology
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November 08,
2010
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Vishay’s SiR880DP ThunderFET® Power MOSFET Named as Top-10 DC/DC Power Product by Electronic Products China Magazine
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July 01,
2010
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New Vishay Siliconix ThunderFET™ Power MOSFET is Industry’s First 80-V MOSFET with On-Resistance Specified at 4.5-V Gate Drive,
with Value of 8.5 mΩ
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May 03,
2010
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Vishay Siliconix Introduces First 30-V P-Channel TrenchFET® Gen III Power MOSFET in PowerPAK® 1212-8 Package
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September 10,
2009
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Latest Vishay Siliconix Billion-Cell Per Square Inch P-Channel TrenchFET® Gen III Power MOSFET Offers Industry-Low On-Resistance
in PowerPAK® SC-75
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August 21,
2009
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Vishay Launches 60-V TrenchFET Power MOSFET with Industry-First 6.1 Milliohms On-Resistance in SO-8 Size Package
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August 10,
2009
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Vishay’s New SkyFET® Monolithic Power MOSFET and Schottky Diode Achieves 3 Milliohms On-Resistance in SO-8 with TrenchFET®
Gen III Technology
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July 24,
2009
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New Vishay Siliconix 12-V TrenchFET® Gen III Power MOSFET Features Industry-Best 1.2-mΩ Maximum On-Resistance at 10 V and
1.7 mΩ at 4.5 V
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June 25,
2009
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Vishay Siliconix 30-V P-Channel TrenchFET® Gen III Power MOSFET Sets New Industry First with 2.6-mΩ Maximum On-Resistance
in SO-8 Footprint Area
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May 11,
2009
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Vishay Siliconix Releases New 20-V P-Channel TrenchFET® Gen III Power MOSFET With Industry’s Lowest On-Resistance for 3.3-mm
by 3.3-mm Footprint Area of 3.9 mΩ at 10 V, 5.5 mΩ at 4.5 V, and 9.8 mΩ at 2.5 V
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April 01,
2009
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Vishay Siliconix TrenchFET® Gen III Power MOSFETs Honored with EN-Genius Product of the Year Award
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March 25,
2009
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Vishay’s SiR440DP TrenchFET® Gen III Power MOSFET Chosen as Product of the Year by Electronic Products China Magazine
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March 04,
2009
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Vishay Siliconix Releases New 20-V P-Channel TrenchFET® Gen III Power MOSFET With Industry’s Lowest On-Resistance for SO-8
Footprint of 1.9 mΩ at 10 V and 2.5 mΩ at 4.5 V
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December 17,
2008
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Vishay Siliconix Releases New 20-V and 30-V P-Channel TrenchFET® Power MOSFETs With Industry’s Lowest On-Resistance in the
SO-8 Footprint Down to 3.3 mΩ at 10 V and 5.5 mΩ at 4.5 V
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December 03,
2008
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Siliconix Releases First 20-V and 30-V N-Channel TrenchFET® Gen III Power MOSFETs With TurboFET™ Technology For Low Switching
Losses and Faster Switching
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November 19,
2008
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New Vishay Siliconix 20-V TrenchFET® Gen III Power MOSFET Features Industry-Best Maximum 2.0-mΩ On-Resistance at 4.5 V and
1.55 mΩ at 10 V
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October 22,
2008
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New Siliconix 25-V TrenchFET® Gen III Power MOSFET Features Industry-Best Maximum 2.1-mΩ On-Resistance at 4.5 V and 1.7 mΩ
at 10 V in PowerPAK® SO-8 Package
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September 24,
2008
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Vishay Releases Industry’s First 30-V Monolithic Power MOSFET and Schottky Diode With Double-Sided Cooling
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January 22,
2007
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Vishay’s New 20-V to 40-V PolarPAK® Power MOSFETs Combine Thermal Benefits of Double-Sided Cooling Package with On-Resistance
Down To 1.4 Milliohms
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November 21,
2005
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New Vishay Siliconix Power MOSFETs in Thermally Enhanced PowerPAK 1212 8 Package Combine 3.3-mm by 3.3-mm Footprint, Thermal
Resistance of Less Than 2 Degrees Celsius Per Watt, and On-Resistance Values Down to 3.7 Milliohms
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March 29,
2004
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Siliconix Targets Automotive 12-V Boardnet With New P-Channel −40-V and −60-V TrenchFET® Power MOSFETs
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July 16,
2003
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Vishay's New 20-V VDS/20-V VGS MOSFETs Provide On-Resistance Down to 3.2 mΩ for Efficient Desktop and Server Core DC-to-DC
Converters
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July 12,
2000
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New TrenchFETs® Set To Support 42-V Automotive Systems, Set Records for On-Resistance in TO-220 and D2PAK
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