March 26, 2008

New 30-V TrenchFET Power MOSFET with Industry-Best Maximum 2.25-Milliohm On-Resistance at a 4.5-V Gate Drive Voltage is First Device in Vishay Siliconix TrenchFET® Gen III Family

December 12, 2007

Vishay’s Monolithic SkyFET™ Power MOSFET and Schottky Diode Enables 6 % Improvement in DC/DC Converter Efficiency

January 22, 2007

Vishay’s New 20-V to 40-V PolarPAK® Power MOSFETs Combine Thermal Benefits of Double-Sided Cooling Package with On-Resistance Down To 1.4 Milliohms

December 12, 2005

New Vishay Siliconix PolarPAK® Power MOSFETs With Double-Sided Cooling Offer On-Resistance Down to 1.9 Milliohms Maximum, Current Handling Up to 60 A in 5-mm by 6-mm Footprint

November 21, 2005

New Vishay Siliconix Power MOSFETs in Thermally Enhanced PowerPAK 1212 8 Package Combine 3.3-mm by 3.3-mm Footprint, Thermal Resistance of Less Than 2 Degrees Celsius Per Watt, and On-Resistance Values Down to 3.7 Milliohms

April 20, 2005

New Vishay Siliconix 40-V and 60-V MOSFETs Feature Industry's First Combination of High 3.4-V Threshold Voltage and Low 2.7-mΩ On-Resistance for High-Temperature Automotive Applications

August 16, 2002

Temperature- and Current-Sensing TrenchFETs® in Thermally Enhanced D2PAK Package Improve Performance and Reliability, Save Board Space, and Lower Costs