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| All MOSFETs press releases |
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March 26,
2008
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New 30-V TrenchFET Power MOSFET with Industry-Best
Maximum
2.25-Milliohm On-Resistance at a 4.5-V Gate Drive Voltage is First
Device in
Vishay Siliconix TrenchFET® Gen III Family
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December 12,
2007
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Vishay’s Monolithic SkyFET™ Power MOSFET and Schottky Diode Enables 6
% Improvement in DC/DC Converter Efficiency
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November 07,
2007
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Vishay TrenchFET® Power MOSFETs For OR-ing
Applications Feature Industry-Best On-Resistance Down to 1.5 Milliohms in
SO-8 Footprint Area with 20-V Drain-to-Source and Gate-to-Source Ratings
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January 22,
2007
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Vishay’s New 20-V to 40-V PolarPAK® Power MOSFETs Combine Thermal Benefits of Double-Sided Cooling Package with On-Resistance Down To 1.4 Milliohms
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December 12,
2005
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New Vishay Siliconix PolarPAK® Power MOSFETs With Double-Sided Cooling Offer On-Resistance Down to 1.9 Milliohms Maximum,
Current Handling Up to 60 A in 5-mm by 6-mm Footprint
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November 21,
2005
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New Vishay Siliconix Power MOSFETs in Thermally Enhanced PowerPAK 1212 8 Package Combine 3.3-mm by 3.3-mm Footprint, Thermal Resistance of Less Than 2 Degrees Celsius Per Watt, and On-Resistance Values Down to 3.7 Milliohms
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April 20,
2005
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New Vishay Siliconix 40-V and 60-V MOSFETs Feature Industry's First Combination of High 3.4-V Threshold Voltage and Low 2.7-mΩ On-Resistance for High-Temperature Automotive Applications
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March 29,
2004
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Siliconix Targets Automotive 12-V Boardnet With New P-Channel −40-V and −60-V TrenchFET® Power MOSFETs
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April 21,
2003
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Siliconix Launches Complete Family of TrenchFET® Power MOSFETs
Built on Advanced P-Channel Technology
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October 04,
2002
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New PowerPAK SO-8 Power MOSFETs Provide Industry-Best Specifications for Point of Load DC-to-DC Conversion Applications
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May 30,
2001
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New Power MOSFETs Are PWM Optimized for Line-Powered Synchronous Rectification Applications: Include Industry-First 12-V Device
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May 11,
2001
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New LITTLE FOOT® Power MOSFETs for Isolated DC-to-DC Converters are PWM Optimized
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