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Related press releases
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October 12,
2011
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New Vishay Siliconix 600 V and 650 V N-Channel Power MOSFETs Feature Currents From 22 A to 47 A and Ultra-Low Maximum On-Resistance
Down to 64 mΩ
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October 14,
2010
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New 500-V Vishay Siliconix N-Channel Power MOSFETs Feature Low 0.38 Ω On-Resistance and Improved Gate Charge of 68 nC in TO-220AB,TO-220
FULLPAK, D²PAK, and TO-247AC Packages
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July 12,
2010
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New 500-V Vishay Siliconix N-Channel Power MOSFETs Feature Low 0.555-Ω On-Resistance and Improved Gate Charge of 48 nC in
TO-220,TO-220 FULLPAK, and D²PAK Packages
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January 28,
2004
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Vishay's New 250-V N-Channel TrenchFET® Power MOSFETs Offer Up to 50% Improved On-Resistance in SO-8 and D2PAK Footprints
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July 16,
2003
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Vishay's New 20-V VDS/20-V VGS MOSFETs Provide On-Resistance Down to 3.2 mΩ for Efficient Desktop and Server Core DC-to-DC
Converters
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March 25,
2002
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TrenchFETs® in New Thermally Enhanced D2PAK Package Save Board Space and Lower Costs With Industry's Best Thermal Performance
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July 12,
2000
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New TrenchFETs® Set To Support 42-V Automotive Systems, Set Records for On-Resistance in TO-220 and D2PAK
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