 |
Related press releases
|
 |
|
February 13,
2012
|
 |
New Vishay Siliconix 30 V P-Channel Chipscale MOSFETs Industry’s Lowest On-Resistance for 30 V in 1.6 mm by 1.6 mm Size
|
|
May 03,
2010
|
 |
Vishay Siliconix Introduces First 30-V P-Channel TrenchFET® Gen III Power MOSFET in PowerPAK® 1212-8 Package
|
|
April 23,
2010
|
 |
Vishay Siliconix Introduces First P-Channel TrenchFET® Gen III Power MOSFET in Chipscale MICRO FOOT® Package
|
|
December 21,
2009
|
 |
Vishay Siliconix 12-V P-Channel TrenchFET® Gen III Power MOSFET Offers Industry’s Lowest On-Resistance From 27 mΩ at 4.5 V
to 130 mΩ at 1.5 V in Ultra-Small 1.6-mm by 1.6-mm Footprint Area
|
|
November 18,
2009
|
 |
Vishay Siliconix 20-V P-Channel TrenchFET® Gen III Power MOSFET Offers Industry’s Lowest On-Resistance From 18 mΩ at 4.5 V
to 65 mΩ at 1.8 V in Compact 2-mm by 2-mm Footprint Area
|
|
September 10,
2009
|
 |
Latest Vishay Siliconix Billion-Cell Per Square Inch P-Channel TrenchFET® Gen III Power MOSFET Offers Industry-Low On-Resistance
in PowerPAK® SC-75
|
|
June 25,
2009
|
 |
Vishay Siliconix 30-V P-Channel TrenchFET® Gen III Power MOSFET Sets New Industry First with 2.6-mΩ Maximum On-Resistance
in SO-8 Footprint Area
|
|
May 11,
2009
|
 |
Vishay Siliconix Releases New 20-V P-Channel TrenchFET® Gen III Power MOSFET With Industry’s Lowest On-Resistance for 3.3-mm
by 3.3-mm Footprint Area of 3.9 mΩ at 10 V, 5.5 mΩ at 4.5 V, and 9.8 mΩ at 2.5 V
|
|
March 04,
2009
|
 |
Vishay Siliconix Releases New 20-V P-Channel TrenchFET® Gen III Power MOSFET With Industry’s Lowest On-Resistance for SO-8
Footprint of 1.9 mΩ at 10 V and 2.5 mΩ at 4.5 V
|
 |
|
|
 |