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Related press releases
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April 30,
2012
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Next-Generation 400 V, 500 V, and 600 V Vishay Siliconix N-Channel Power MOSFETs Offer Ultra-Low On-Resistance Down to 0.130
Ω, FOM Down to 7.65 Ω-nC, and Currents From 3 A to 36 A
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October 12,
2011
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New Vishay Siliconix 600 V and 650 V N-Channel Power MOSFETs Feature Currents From 22 A to 47 A and Ultra-Low Maximum On-Resistance
Down to 64 mΩ
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October 14,
2010
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New 500-V Vishay Siliconix N-Channel Power MOSFETs Feature Low 0.38 Ω On-Resistance and Improved Gate Charge of 68 nC in TO-220AB,TO-220
FULLPAK, D˛PAK, and TO-247AC Packages
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July 12,
2010
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New 500-V Vishay Siliconix N-Channel Power MOSFETs Feature Low 0.555-Ω On-Resistance and Improved Gate Charge of 48 nC in
TO-220,TO-220 FULLPAK, and D˛PAK Packages
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April 01,
2010
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New 500-V Vishay Siliconix N-Channel Power MOSFET Features Low trr of 63 ns, Qrr of 114 nC, and On-Resistance of 1.0 O at
10 V
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