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Related press releases

February 10, 2011

Vishay Siliconix Dual 20 V P-Channel TrenchFET® Gen III Power MOSFET Offers Industry’s Lowest On-Resistance Down to 54 mΩ at 4.5 V in the 2 mm by 2 mm Footprint Area

January 17, 2011

Vishay Siliconix 8 V P-Channel TrenchFET® Power MOSFET Offers Industry’s Lowest On-Resistance Down to 16 mΩ in PowerPAK® SC-70 2 mm by 2 mm Footprint Area

April 08, 2010

Vishay Siliconix Extends P-Channel TrenchFET® Gen III Technology to Dual 12-V Power MOSFET; New Device Lowers On-Resistance Up to 32 % in 2-mm by 2-mm Footprint Area

December 21, 2009

Vishay Siliconix 12-V P-Channel TrenchFET® Gen III Power MOSFET Offers Industry’s Lowest On-Resistance From 27 mΩ at 4.5 V to 130 mΩ at 1.5 V in Ultra-Small 1.6-mm by 1.6-mm Footprint Area

November 18, 2009

Vishay Siliconix 20-V P-Channel TrenchFET® Gen III Power MOSFET Offers Industry’s Lowest On-Resistance From 18 mΩ at 4.5 V to 65 mΩ at 1.8 V in Compact 2-mm by 2-mm Footprint Area

September 10, 2009

Latest Vishay Siliconix Billion-Cell Per Square Inch P-Channel TrenchFET® Gen III Power MOSFET Offers Industry-Low On-Resistance in PowerPAK® SC-75

August 14, 2009

Vishay Siliconix Extends Family of N-Channel TrenchFET® Power MOSFETs in Compact PowerPAK® SC-75 Package to Offer 8-V to 30-V VDS Range

April 30, 2009

Vishay Siliconix Extends P-Channel TrenchFET® Gen III Technology to Ultra-Small Packages, Lowering On-Resistance Up to 44 % With New Dual 20-V Power MOSFET in 2-mm by 2-mm Footprint Area

December 12, 2008

Vishay Siliconix Releases New 20-V N-Channel Power MOSFET Plus Schottky Diode With Industry’s Smallest Footprint of 1.6 mm by 1.6 mm

August 20, 2008

New Vishay Siliconix 8-V to 30-V P-Channel PowerPAK SC-75 Power MOSFETs Feature On-Resistance as Low as 0.052 Ohms in 1.6-mm by 1.6-mm Footprint Area

May 28, 2008

New Vishay Siliconix Power MOSFETs in Compact 2-mm by 2-mm PowerPAK® SC-70 Package Offer Half the Size of TSOP-6 With Comparable On-Resistance Down to 11 mΩ

October 10, 2007

Next-Generation Vishay Siliconix P-Channel TrenchFET® Power MOSFETs Offer Industry-Low On-Resistance Down To 29 Milliohms

August 15, 2007

Vishay Launches Industry-First Power MOSFETs Specifying On-Resistance at 1.2-V Gate-to-Source Voltage

April 27, 2005

New Vishay Siliconix -150-V and -200-V P-Channel Power MOSFETs Save Space for Active Clamp Configurations

May 24, 2001

New TrenchFET® MOSFETs Break Performance Records in Tiny LITTLE FOOT® SC-89 and SC-75 Packages

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