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Record-breaking maximum on-resistance values under 4 mΩ in the SO-8 footprint for DC/DC conversion
 First TrenchFET to break the 4-milliohm barrier at 4.5V in the SO-8 footprint
Higher efficiency for reduced power consumption and prolonged battery life in end systems
Extremely low Qgd/Qgs ratio provides substantial shoot-thru protection
Reduce on-resistance and conduction losses further by allowing systems to run cooler
Show a gain of nearly 1% in efficiency and a 7°C reduction in device temperature during testing in a typical application
High-performing, cost-effective solution that simplifies manufacturing process
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