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December 05, 2011

Vishay Intertechnology’s SiR870DP Power MOSFET and 34 THE Hall Effect Sensor Win EDN China 2011 Innovation Awards

February 24, 2011

New 100 V Vishay Siliconix N-Channel TrenchFET® Power MOSFETs Featuring New ThunderFET® Technology Offer Lowest On-Resistance at 4.5 V VGS Rating in SO-8 and PowerPAK® SO-8 Packages

January 07, 2009

Vishay Siliconix Releases Industry’s First 190-V N-Channel Power MOSFET Plus 190-V Co-Packaged Power Diode With Compact 2-mm by 2-mm Footprint and Low 0.75-mm Profile

November 21, 2005

New Vishay Siliconix Power MOSFETs in Thermally Enhanced PowerPAK 1212 8 Package Combine 3.3-mm by 3.3-mm Footprint, Thermal Resistance of Less Than 2 Degrees Celsius Per Watt, and On-Resistance Values Down to 3.7 Milliohms

April 07, 2004

Vishay Launches 240-Milliohm, 200-V Switching MOSFET in 3.3-mm by 3.3-mm PowerPAK® 1212-8

January 28, 2004

Vishay's New 250-V N-Channel TrenchFET® Power MOSFETs Offer Up to 50% Improved On-Resistance in SO-8 and D2PAK Footprints

March 25, 2002

TrenchFETs® in New Thermally Enhanced D2PAK Package Save Board Space and Lower Costs With Industry's Best Thermal Performance

August 22, 2001

New Siliconix Power MOSFETs for Isolated DC/DC Conversion Meet Higher Voltage Demands in Low-Profile PowerPAK™ Package

May 11, 2001

New LITTLE FOOT® Power MOSFETs for Isolated DC-to-DC Converters are PWM Optimized

July 12, 2000

New TrenchFETs® Set To Support 42-V Automotive Systems, Set Records for On-Resistance in TO-220 and D2PAK