WFET® Power MOSFETs for DC/DC Resolve Trade-Off Between r_(DS)on and Switching Performance

Record-breaking r_(DS)on*Q_gd figures of merit (FOM) to improve dc-to-dc converter efficiency
Specific benefits depend on whether the device is used on the high side or low side of the dc-to-dc converter
     High-side benefits: Reduces C_rss and Q_gd with no impact on r_DS(on) performance — allowing lower switching losses to be combined with low on-resistance
     Low-side benefits: A low Q_gd/Q_gs ratio ensures higher shoot-thru immunity. This means a lower threshold voltage can be used, which translates into lower on-resistance performance.
Available in the thermally enhanced PowerPAK® SO-8 for lower thermal resistance and greater power dissipation
R_g-tested to ensure that devices perform as specified in high-frequency dc-to-dc applications
Enables design of faster, lighter, smaller, cooler, more efficient, and longer-running products with more robust feature sets

This curve shows efficiency results when the Si4390DY is used on the high side and the Si4368DY is used on the low side in a 300-kHz, all-WFET synchronous buck converter implementation.

WFET selector guide

Target Applications:
Synchronous buck (single- and multi-phase configurations, handling 20 A and up per phase, frequencies of 200 kHz and up) dc-to-dc converters in notebook PCs, servers, and VRM modules
Synchronous rectification in fixed telecom systems

More About WFET Power MOSFETs

Today's powerful notebook computers need power MOSFETs that can operate at higher frequencies and handle higher currents while occupying as little space as possible on printed circuit boards. WFET power MOSFETs are the industry's first devices to combine the ultra low on-resistance capabilities of TrenchFET® power MOSFETs with extraordinarily low gate-drain capacitance. Lower on-resistance means that more power can be converted in less space. Lower gate drain-gate capacitance means lower switching losses at high frequencies. Together, they add up to more efficient dc-to-dc converters. Future WFET devices will include devices aimed at desktop computer and primary dc-to-dc converter applications with breakdown voltages ranging from 8 V to 250 V.