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WFET® Power MOSFETs for DC/DC resolve trade-off between
r(DS)on and switching performance
 Record-breaking r(DS)on*Qgd figures of merit (FOM) to improve dc-to-dc converter efficiency
Specific benefits depend on whether the device is used on the high side or low side of the dc-to-dc converter
High-side benefits: Reduces Crss and Qgd with no impact on rDS(on) performance — allowing lower switching losses to be combined with low on-resistance
Low-side benefits: A low Qgd/Qgs ratio ensures higher shoot-thru immunity. This means a lower threshold voltage can be used, which translates into lower on-resistance performance
Available in the thermally enhanced PowerPAK® SO-8 for lower thermal resistance and greater power dissipation
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