Features:
- 110 ºC ambient operating temperature
- High isolation voltage (VISO) of 5000 VRMS
- Feature a construction consisting of a phototransistor optically
coupled to a gallium arsenide infrared-emitting diode in a 4- or 5-lead
SOP-6L package
18 devices differ by current transfer ratios, range from 22 % to 200 %
(minimum)
- 18 devices differ by current transfer ratios, range from 22 % to
200 % (minimum)
- Low profile package of 2 mm with an external clearance and
creepage of 8 mm
- RoHS and WEEE compliant
- Lead (Pb)-free and comply with RoHS 2002/95/EC and WEEE
2002/96/EC
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