Up to 1/2 rDS(on) reduction with breakthrough double sided-cooling package
Dual heat dissipation paths double current density (>60 A)
Fixed footprint and pad layout across family
Easy handling provides high yield and reliability
for high volume production
More info > PolarPAK® (4) Multiple Sources Available
3-W maximum power dissipation in compact 3-mm x 1.8-mm footprint increases power density, save space
- 1/5 SO-8 footprint, 1/2 SO-8 profile, same 3-W maximum power dissipation
- 2/3 TSOP-6 footprint, 3/4 TSOP-6 profile, 75 % lower thermal resistance
- N-Ch rDS(on) ≥ 15 mΩ; P-Ch rDS(on) ≥ 21 mΩ
MOSFETs With VGS = 1.2-V On-Resistance Rating -
Industry's First
- On-resistance ratings at Vgs = 1.2 V align MOSFET turn-on voltage with 1.2 V and 1.3 V digital ICs
- Ultra-low on-resistance at 1.2 V and 1.5 V ratings
- Single n- and p-channel device options
- Ultra-small packages, down to 1.5 mm x 1.5 mm
More Info
1.2 V Rated On-Resistance MOSFETs
1.5 V Rated On-Resistance MOSFETs
MOSFET FEA Thermal Simulation Tool
- Save simulations for further use & modifications
- Modeling for MOSFETs can include effect of other heat dissipating components
- Setups include: power profile, heat sink, PCB, system temp., air flow and more
- PDF report supplied with thermal images and temperature data can be downloaded to Excel




