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Vishay Launches New LITTLE FOOT® Family in SC-70: Tiny Power MOSFETs Set Record for this Package Type
MALVERN, PENNSYLVANIA - February 15, 2000 - A new LITTLE FOOT® power MOSFET family was launched today by Vishay Intertechnology, Inc. with the release of the first such devices in the SC-70 package. Built on the proprietary Vishay Siliconix TrenchFET process, the devices released today set records for on-resistance in this package type, offering guaranteed specifications at gate drives as low as 1.8 V.
With a footprint measuring just 2.0 mm by 2.1 mm, the new 3-pin and 6-pin LITTLE FOOT SC-70 devices will serve as a space-saving replacement for SOT-23 and other larger power MOSFETs used for load switching and power management in cell phones, portable instruments, and notebook computers.
"Because it is smaller than a SOT-23 and easy to place on printed circuit boards, the SC-70 is becoming a very popular package type for space constrained designs," said Swapan Banerjee, Marketing Director at Vishay Intertechnology. "These LITTLE FOOT devices set a new standard for SC-70 performance with specifications that exceed any previous power MOSFETs in this package, and will thus help to accelerate this process."
The first 12 LITTLE FOOT SC-70 power MOSFETs include three single p-channel devices offering designers a choice of -8-V (Si1405DL), -12-V (Si1407DL), and -20-V (Si1403DL) breakdown voltages. On-resistance at a -4.5-V gate drive ranges from 125 milliohms for the -8-V device to 180 milliohms for the -20-V device, with maximum current handling of 1.8 A. Maximum power dissipation for the 6-pin SC-70 package is 625 mW.
The new LITTLE FOOT SC-70 power MOSFETs also include a series of dual p-channel, n-channel, and complementary n- and p-channel devices, any of which can be used to replace two single devices in the SOT-23. Offering the same choice of -8-V (Si1905DL), -12-V (Si1907DL), and -20-V (Si1903DL) breakdown voltages, the dual p-channel devices offer on-resistance in the range of 600 to 995 milliohms at a 4.5-V gate drive, while the complementary devices each pair a 385-milliohm n-channel MOSFET with a 600-milliohm or 995-milliohm p-channel. A dual n-channel rated at 20 V, Si1902DL, offers on-resistance of 385 milliohms.
Rounding up the new offerings are three single p-channel devices in a 3-pin SC-70 package. On-resistance ranges from 280 milliohms to 430 milliohms for devices offering a choice of of -8-V (Si1305DL), -12-V (Si1307DL), and -20-V (Si1303DL) breakdown voltages.
Samples and production quantities of all 12 new devices are available now, with lead times of 8 to 10 weeks for larger orders.
Vishay Intertechnology, Inc., a Fortune 1000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers
of discrete semiconductors (diodes, MOSFETs, and infrared optoelectronics) and passive electronic components (resistors, inductors,
and capacitors). These components are used in virtually all types of electronic devices and equipment, in the industrial,
computing, automotive, consumer, telecommunications, military, aerospace, power supplies, and medical markets. Vishay’s product
innovations, successful acquisition strategy, and "one-stop shop" service have made it a global industry leader. Vishay can
be found on the Internet at www.vishay.com.