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Vishay Targets Automotive Systems With New Record-Breaking TrenchFETs
MALVERN, PENNSYLVANIA - April 4, 2000 - Vishay Intertechnology today reconfirmed its technological leadership in the automotive MOSFET market with the release of fourrecord-breaking devices in the TO-220 and D2PAK packages.
Vishay Intertechnology today reconfirmed its technological leadership in the automotive MOSFET market with the release of four record-breaking devices in the TO-220 and D2PAK packages.
The new Vishay Siliconix TrenchFETs, which include both n-channel and p-channel devices, offer the lowest on-resistance everrecorded for power MOSFETs in the automotive voltage range in industry-standard packages: 3.5 milliohms for a 40-V n-channel device and 8milliohms for a 55-V p-channel device. On-resistance for the n-channel devices is 13% percent lower than the closest competing device while thenew p-channel TrenchFETs provide 60% lower on-resistance than the nearest competitor.
The new TrenchFETs will serve in motor control and relay replacement applications in automobiles, where they will allow designers toreduce the use of heat sinks and to replace power MOSFETs in larger packages such as the TO-247.
The TrenchFETs released today include two 85-A n-channel devices and two 75-A p-channel devices. The n-channel SUP85N04-03 (TO-220)and SUB85N04-03 (D2PAK) offer 3.5-milliohm maximum on-resistance with a 40-V breakdown voltage, while the p-channel SUP75P05-08 (TO-220) andSUB75P05-08 (D2PAK) have a maximum rating of 8 milliohms and a breakdown voltage of -55 V.
"Besides giving designers the lowest on-resistance available for their voltage ratings and polarity, these new TrenchFETs feature breakdown voltages that are optimized for typical automotive applications," said Klaus Pietrczak, Automotive Market Development Manager at Vishay Intertechnology. "This ensures that users won't have to pay for more voltage than they need."
The availability of an 8-milliohm p-channel TrenchFET will be especially significant for high-side switching applications, eliminating the traditional tradeoff between performance and the convenience of a MOSFET that can be driven directly by integrated circuits, even when the switch is on the high side of the load. The p-channel SUP75P05-08 and SUB75P05-08 will likewise allow a much simpler drive design for the high-side MOSFETs in an H-bridge configuration.
Samples and production quantities of all four new TrenchFETs are available now, with lead times of 8 to 10 weeks for larger orders.
Vishay Intertechnology, Inc., a Fortune 1000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers
of discrete semiconductors (diodes, MOSFETs, and infrared optoelectronics) and passive electronic components (resistors, inductors,
and capacitors). These components are used in virtually all types of electronic devices and equipment, in the industrial,
computing, automotive, consumer, telecommunications, military, aerospace, power supplies, and medical markets. Vishay’s product
innovations, successful acquisition strategy, and "one-stop shop" service have made it a global industry leader. Vishay can
be found on the Internet at www.vishay.com.