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For more information:
Media contact -  Bob Decker, Redpines
Phone:  1.415.409.0233 
Fax:  1.650.618.1512 
E-mail:  bob.decker@redpinesgroup.com

New Low-Side 30-V Power MOSFET and Companion High-Side Device Provide Industry-Best Specifications for High Efficiency in DC-to-DC Conversion Applications

New Low-Side 30-V Power MOSFET and Companion High-Side Device Provide Industry-Best Specifications for High Efficiency in DC-to-DC Conversion Applications


MOSFETs

Products mentioned:

Si4892DY
Si4362DY
For more information:
Media contact -  Bob Decker, Redpines
Phone:  1.415.409.0233 
Fax:  1.650.618.1512 
E-mail:  bob.decker@redpinesgroup.com

SANTA CLARA, CALIFORNIA - February 22, 2002 - A new milestone in optimizing MOSFETs for core voltage DC-to-DC power conversion was reached today with the release of two advanced LITTLE FOOT devices by Siliconix incorporated (NASDAQ: SILI), an 80.4%-owned subsidiary of Vishay Intertechnology, Inc. (NYSE: VSH).

Latest in the Vishay Siliconix portfolio of constantly improving solutions for DC-to-DC converters, the new devices are a synchronous low-side power MOSFET (Si4362DY) and a control high-side power MOSFET (Si4892DY) that will deliver industry-best performance when used together in single or multiphase power supply circuits for notebook computers and game stations.

By key figures of merit, the new devices represent an improvement over previous-generation MOSFETs used for DC-to-DC conversion applications.

With an exceptionally low on-resistance rating of 6.25 mΩ at a 4.5-V gate drive - 17% lower than competing devices - the new Si4362DY is optimized for low-side operation, reducing conduction losses and thus boosting efficiency. Optimized for high-side operation, the Vishay Siliconix Si4892DY features a very low typical gate charge of 8.7 nC, minimizing switching losses, and on-resistance of 20 mΩ at a 4.5-V gate drive.

The new low-side Si4362DY also features a gate-drain-to-gate-source charge ratio of 0.6 - 25% better than competing devices - and a very low gate resistance of 1.3 Ω, both characteristics that help to prevent "shoot-through" conditions in which the high- and low-side MOSFETs are on, creating a short from the input voltage to ground.

Improving on its predecessor, the Si4894DY, the new Si4892DY features a lower gate resistance of 1 Ω, a 30% better on-resistance times gate charge product of 139.2, and faster turn-on times. The device's low switching losses and higher speeds combine to provide higher efficiency control.

Working together, the two 30-V MOSFETs provide increased efficiency, longer run times, and cooler operation for portable computers and game consoles. The new devices' low gate-drain-to-gate-source charge ratio will allow designers to incorporate less-expensive MOSFET drivers into end products, further reducing component costs.

Samples and production quantities of the Si4362DY and Si4892DY, both in the SO-8 package, are available now with lead times of six to eight weeks for larger orders.

Vishay Intertechnology, Inc., a Fortune 1000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers of discrete semiconductors (diodes, MOSFETs, and infrared optoelectronics) and passive electronic components (resistors, inductors, and capacitors). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, power supplies, and medical markets. Vishay’s product innovations, successful acquisition strategy, and "one-stop shop" service have made it a global industry leader. Vishay can be found on the Internet at www.vishay.com.

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For more information:
Media contact -  Bob Decker, Redpines
Phone:  1.415.409.0233 
Fax:  1.650.618.1512 
E-mail:  bob.decker@redpinesgroup.com