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For more information:
Media contact -  Bob Decker, Redpines
Phone:  1.415.409.0233 
Fax:  1.650.618.1512 
E-mail:  bob.decker@redpinesgroup.com

30-V Power MOSFETs Optimized for Low- and High-Side Operation Provide Industry-Best Performance for Cooler, More Efficient Portable Computers and Game Stations


For more information:
Media contact -  Bob Decker, Redpines
Phone:  1.415.409.0233 
Fax:  1.650.618.1512 
E-mail:  bob.decker@redpinesgroup.com

SANTA CLARA, CALIFORNIA - April 25, 2002 - A new series of 30-V n-channel TrenchFETs® that will help to make portable computers and game stations run cooler, use less power, and function longer, was announced today by Siliconix incorporated (NASDAQ: SILI), an 80.4%-owned subsidiary of Vishay Intertechnology, Inc. (NYSE: VSH).

Intended for use in single or multiphase power supply circuits in core voltage dc-to-dc converters, the new synchronous low-side and control high-side power MOSFETs provide industry-best specifications for this application, including exceptionally low gate-source-to-gate-drain-charge ratios that enable the use of low-cost MOSFET drivers without sacrificing reliability.

The new Si4364DY and Si4858DY are optimized for low-side synchronous rectifier operation, minimizing conduction losses and enhancing efficiency with on-resistance ratings at least 12% lower than the next best devices at a 4.5-V gate drive. Designers will choose between these devices depending on the frequency at which the dc-to-dc converter is running and the gate drive required by the circuit.

With its low on-resistance of 5.5 mΩ and typical gate chargeof 62 nC, the Si4364DY is designed for 200- to 300-kHz applications where a 5-V gate drive is used. For higher-frequency applications from 500 kHz to 1 MHz using a 5-V gate drive, and for applications of any frequency requiring a gate drive over 5 V, the Si4858DY features an even lower gate charge of 30.5 nC and an on-resistance rating of 7 mΩ at a 4.5-Vgate drive. The previously released Si4362DY, with on-resistance of 6.25mΩ and a gate charge of 42 nC, is intended for use with dc-to-dc converters running in the 300-kHz to 500-kHz range.

The Si4860DY is designed for both low- and high-side operation. With an on-resistance rating of just 11 mΩ at a 4.5-V gate drive, the Si4860DY provides low conduction losses in low-side operation. Acting as high-side MOSFET, the fast-switching Si4860DY minimizes switching losses and produces higher efficiency control. The device features a turn-on delay time of just 18 ns and a very low typical gate charge value of 13 nC: 27% lower than competing devices capable of handling a 10- to 25-A output current. When used in both the low- and high-side positions, the Si4860DY offers an on-resistance-times-gate-charge product at least 22% lower than the next best device on the market, while allowing designers to simplify the manufacturing process by using the same power MOSFET for both sockets.

Exceptionally low gate-source-to-gate-drain-charge ratios of 0.57 (Si4364DY), 0.7 (Si4858DY), and 0.8 (Si4860DY), as well as low gate resistance values ranging from 1 Ω to 1.4 Ω, help prevent"shoot-through" situations in which the high- and low-side MOSFETs both are on, creating a short from the input voltage to ground. This shoot-through protection enables designers to cut component costs by incorporating less-expensive MOSFET drivers into product designs.

Along with the previously released Si4894DY and Si4892DY for the high-side, these new devices comprise a complete Vishay Siliconix family of power MOSFETs optimized for low- and high-side operation. When operating together in low- and high-side sockets, these MOSFETs combine to offer industry-best performance in dc-to-dc converter applications.

The Si4364DY, Si4858DY, and Si4860DY are available in the SO-8 package and feature an operating junction and storage temperature range of -55°C to +150°C. The Si4860DY also is available in DPAK packaging as the SUD50N03-10CP, in TO-251 packaging as the SUY50N03-10CP, and in D2PAK as the SUM85N03-08.

Samples and production quantities of the Si4364DY, Si4858DY, Si4860DY, SUD50N03-10CP, and SUY50N03-10CP are available now with lead times of six to eight weeks for larger orders. The SUM85N03-10CP will be available Q1 2002.

Vishay Intertechnology, Inc., a Fortune 1000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers of discrete semiconductors (diodes, MOSFETs, and infrared optoelectronics) and passive electronic components (resistors, inductors, and capacitors). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, power supplies, and medical markets. Vishay’s product innovations, successful acquisition strategy, and "one-stop shop" service have made it a global industry leader. Vishay can be found on the Internet at www.vishay.com.

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For more information:
Media contact -  Bob Decker, Redpines
Phone:  1.415.409.0233 
Fax:  1.650.618.1512 
E-mail:  bob.decker@redpinesgroup.com