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For more information:
Media contact -  Peter Frey, Vishay Semiconductor GmbH
Phone:  +49 7131 67 2376 
Fax:  +49 7131 67 2423 
E-mail:  peter.frey@vishay.com

Media contact -  Bob Decker, Redpines
Phone:  1.415.409.0233 
Fax:  1.650.618.1512 
E-mail:  bob.decker@redpinesgroup.com

Bipolar RF Transistors With 25-GHz Transition Frequency Provide Exceptional Dynamic Performance in Low- and Medium-Current Applications


RF Transistors

Products mentioned:

TSDF2005W
TSDF2020W
For more information:
Media contact -  Peter Frey, Vishay Semiconductor GmbH
Phone:  +49 7131 67 2376 
Fax:  +49 7131 67 2423 
E-mail:  peter.frey@vishay.com

Media contact -  Bob Decker, Redpines
Phone:  1.415.409.0233 
Fax:  1.650.618.1512 
E-mail:  bob.decker@redpinesgroup.com

MALVERN, PENNSYLVANIA - May 30, 2002 - Two new bipolar RF transistors with a 25-GHz transition frequency and excellent dynamic performance were announced today by Vishay Intertechnology (NYSE: VSH). The new silicon NPN planar RF transistors are designed to serve as RF front-ends for analog and digital wireless communication systems up to 3 GHz, including cordless phones, pagers, and wireless network equipment, as well as TV and satellite tuners, GPS systems, and high-frequency oscillators up to 12 GHz.

Vishay's TSDF2005W and TSDF2020W RF transistors feature low noise figures of 1.2 dB and 1.1 dB and very high power gain values of 21 dB and 20 dB, respectively, providing enhanced dynamic performance in applications with up to 3-GHz operating frequencies. The 5-mA TSDF2005W and 20-mA TSDF2020W offer collector-base capacitances of 0.05 pF and 0.15 pF, and a typical transducer gain of 17 dB. Both devices also feature low feedback capacitance.

With exceptional low- and medium-current performance, these RF transistors provide space-saving and cost-effective solutions for high-volume manufacturing. The devices' compact plastic surface-mount SOT343 package measures just 2.05 mm by 1.25 mm with a 1.0-mm height profile, and features emitter pins that serve also as thermal leads.

Each RF transistor is rated for a collector-base voltage of 10 V, a collector-emitter voltage of 3.5 V, and an emitter base voltage of 1.5 V. The TSDF2005W features a collector current of 12 mA and total power dissipation of 40 mW at an ambient temperature of <132C. The TSDF2020W features a collector current of 40 mA and maximum total power dissipation of 200 mW at an ambient temperature of 60C. The TSDF2005W and TSDF2020W are rated for a maximum junction temperature of 150C and a storage temperature range of -65C to +150C

Samples and production quantities of the TSDF2005W and TSDF2020W are available now, with lead times of four to eight weeks for larger orders.

Vishay Intertechnology, Inc., a Fortune 1000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers of discrete semiconductors (diodes, MOSFETs, and infrared optoelectronics) and passive electronic components (resistors, inductors, and capacitors). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, power supplies, and medical markets. Vishay’s product innovations, successful acquisition strategy, and "one-stop shop" service have made it a global industry leader. Vishay can be found on the Internet at www.vishay.com.

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For more information:
Media contact -  Peter Frey, Vishay Semiconductor GmbH
Phone:  +49 7131 67 2376 
Fax:  +49 7131 67 2423 
E-mail:  peter.frey@vishay.com

Media contact -  Bob Decker, Redpines
Phone:  1.415.409.0233 
Fax:  1.650.618.1512 
E-mail:  bob.decker@redpinesgroup.com