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New Vishay Siliconix Power MOSFETs For Battery Protection Set New Records for On-Resistance in Three Package Types
SANTA CLARA, CALIFORNIA - August 7, 2002 - Siliconix incorporated (NASDAQ: SILI), an 80.4%-owned subsidiary of Vishay Intertechnology, Inc. (NYSE: VSH), today announced five new n-channel TrenchFET® power MOSFETs aimed at battery-protection applications in one- and two-cell lithium-ion and lithium-polymer battery packs and circuitry.
Among the devices released today are two new chipscale power MOSFETs that provide industry-low on-resistance-per-footprint area. For applications that require the lowest possible on-resistance, Vishay Siliconix provides the MICRO FOOT™Si8900EDB, which features an on-resistance of just 24 mΩ at a 4.5-V gate drive and an average footprint area of 8.07 mm2. If a smaller design is more important, the MICRO FOOT Si8902EDB offers on-resistance of 45 mΩ at a 4.5-V gate drive in an average footprint area of 3.68 mm2.
These new bi-directional 20-V MICRO FOOT devices feature a profile of just 0.62 mm and fit easily on slim PCBs required in narrow, handheld electronics. MICRO FOOT devices save space by relying on a solder bump process and proprietary techniques developed at Siliconix to eliminate the need for an outer package to encase the power MOSFET die. Both the Si8900EDB and Si8902EDB provide 4,000-V ESD protection.
In applications such as wall adapters that require a 30-V device, the new bi-directional Si6876EDQ power MOSFET offers low on-resistance - just 30 mΩ at a 4.5-V gate drive - in a TSSOP-8 package. When a lower breakdown voltage is acceptable, the 20-V Si6880EDQ provides still lower on-resistance of 18 mΩ at a 4.5-V gate drive and is specified for operation down to 1.8 V. The Si6880EDQ also is available in the TSSOP-8 package. Both devices feature ESD protection of 4,000 V.
For applications demanding enhanced thermal performance, the 30-V Si7902EDN dual common-drain power MOSFET is available in a PowerPAK™ 1212-8 package with a low profile of just 1.07 mm and a footprint area of just 10.56 mm2 - about half the size of the TSSOP-8. The Si7902EDN features an on-resistance value of 28 mΩ at a 4.5-V gate drive and 3,000-V EDN protection.
The new common-drain devices provide two essential battery-protection functions: protecting against over-current and over-voltage conditions during charging and, with a reverse blocking function, preventing discharge back into the ac source once the battery is fully charged. Their extraordinarily low on-resistance helps to prolong battery life, extending talk and stand-by times in compact portable equipment including cell phones, pagers, and PDAs.
All five of the new power MOSFETs are rated for operation over a temperature range of -55°C to +150°C.
Vishay Intertechnology, Inc., a Fortune 1000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers
of discrete semiconductors (diodes, MOSFETs, and infrared optoelectronics) and passive electronic components (resistors, inductors,
and capacitors). These components are used in virtually all types of electronic devices and equipment, in the industrial,
computing, automotive, consumer, telecommunications, military, aerospace, power supplies, and medical markets. Vishay’s product
innovations, successful acquisition strategy, and "one-stop shop" service have made it a global industry leader. Vishay can
be found on the Internet at www.vishay.com.