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For more information:
Media contact -  Bob Decker, Redpines
Phone:  1.415.409.0233 
Fax:  1.650.618.1512 
E-mail:  bob.decker@redpinesgroup.com

New PowerPAK™ SO-8 Power MOSFETs Provide Industry-Best Specifications for Point of Load DC-to-DC Conversion Applications


MOSFETs

Products mentioned:

Si7882DP
Si7940DP
Si7540DP
For more information:
Media contact -  Bob Decker, Redpines
Phone:  1.415.409.0233 
Fax:  1.650.618.1512 
E-mail:  bob.decker@redpinesgroup.com

SANTA CLARA, CALIFORNIA - October 4, 2002 - To address the trend toward higher system power requirements and lower dc voltage levels in communications systems, Siliconix incorporated (NASDAQ: SILI), an 80.4%-owned subsidiary of Vishay Intertechnology, Inc. (NYSE: VSH) today announced three new PowerPAK™ power MOSFETs intended for Point of Load (POL) dc-to-dc conversion applications in fixed telecom systems.

As POL devices, the new Vishay Siliconix MOSFETs are designed for use in low-voltage step-down applications in 5-V and 3.3-V distributed bus architectures. Because switching the low-voltage rail on the secondary bus tends to cause the highest switching power losses within the system, it is important to use devices with low breakdown and gate-to-source voltages. The low VDS and VGS ratings of these new devices ensure minimal on-resistance and gate charge, resulting in better switching efficiency for this low-voltage environment.

To accommodate a variety of circuit topologies and allow for the best possible use of board space, the 12-V TrenchFET® power MOSFETs announced today include a single n-channel (Si7882DP), a dual n-channel (Si7940DP), and a complementary (Si7540DP) device.

Packaged in the low thermal resistance PowerPAK SO-8, the Si7540DP, Si7882DP, and Si7940DP all offer industry-low on-resistance values. The PowerPAK devices' on-resistance times gate charge products are industry-best as well, resulting in lower switching and conduction losses and thus higher-efficiency dc-to-dc circuits. The new devices are optimized to provide enhanced efficiency at switching speeds greater than 500 kHz.

All three devices offer significantly lower thermal resistance compared to MOSFETs in the standard SO-8 package, while measuring just 6.15 mm by 5.15 mm with a low 1.07-mm height profile.

Device Configuration VDS (V) VGS (V) RDS(on)
(m Ω)
(4.5-V rating)
Typ. Gate Charge
(nC)
rDS(on) x Gate Charge
Si7882DP Single N-Channel 12 8 5.5 21 115.5
Si7940DP Dual N-Channel 12 8 17 11.5 195.5
Si7540DP N-Channel
and
P-Channel
12 8 17 11.5 195.5
-12 -8 32 (at -4.5 V) 13 416

Samples and production quantities of the Si7540DP, Si7882DP, and Si7940DP are available now, with a lead time of 8-10 weeks for larger orders.

Vishay Intertechnology, Inc., a Fortune 1000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers of discrete semiconductors (diodes, MOSFETs, and infrared optoelectronics) and passive electronic components (resistors, inductors, and capacitors). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, power supplies, and medical markets. Vishay’s product innovations, successful acquisition strategy, and "one-stop shop" service have made it a global industry leader. Vishay can be found on the Internet at www.vishay.com.

http://twitter.com/vishayindust
http://www.facebook.com/VishayIntertechnology

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PowerPAK is a trademark of Siliconix incorporated. TrenchFET is a registered trademark of Siliconix incorporated.

For more information:
Media contact -  Bob Decker, Redpines
Phone:  1.415.409.0233 
Fax:  1.650.618.1512 
E-mail:  bob.decker@redpinesgroup.com