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New Vishay Siliconix Power MOSFETs Built on WFET™ Technology Offer Record-Breaking r(DS)on x Qgd Figure of Merit: 60% Lower Than Previous State of the Art
SANTA CLARA, Calif. -- June 30, 2003 -- New power MOSFETs built on a breakthrough TrenchFET® technology that combines greatly reduced switching losses with ultra-low on-resistance were announced today by Siliconix incorporated (NASDAQ: SILI), an 80.4%-owned subsidiary of Vishay Intertechnology (NYSE: VSH).
Reducing gate-drain capacitance by half while maintaining superb on-resistance performance, the new Vishay Siliconix WFET power MOSFETs offer the industry's best r(DS)on x Qgd figure of merit: 60% lower than previous-generation devices. Lower on-resistance means that more power can be converted in less space, and lower gate-drain capacitance means more efficient switching at high frequencies. In a breakthrough that will enable the design of much more efficient dc-to-dc converters, Vishay's new WFET power MOSFET technology combines both capabilities in a single device.
Vishay's innovative WFET power MOSFETs use a thicker gate oxide at the bottom of the silicon trench to enable a two-thirds reduction in Crss with minimal impact on on-resistance performance. Patent-pending techniques allow a further cell-density increase, which lowers on-resistance while maintaining switching performance.
The four WFET power MOSFETs released today are designed to provide efficient high-side operation - running cooler or handling higher output current with the same efficiency - in notebook CPU core dc-to-dc converters in single- and multi-phase configurations with a 20-A (Si4390DY and Si7390DP) to 40-A (Si4392DYand Si7392DP) output current. TheSi4390DYand Si4392DYare offered in the LITTLE FOOT® SO-8 and, for improved thermal performance, the Si7390DP and Si7392DPare offered in the PowerPAK® SO-8.
New WFET Power MOSFETs: Summary Table
|VDS||VGS||RDS(on)||RDS(on)@4.5 V (Ω)||Qg@ 4.5 V (nC)||Qgd(nC)||ID(A)||PD (W)||RDS(on) x Qg@4.5 V||Package|
Future WFET power MOSFETs will include devices aimed at desktop computer and primary dc-to-dc converter applications with breakdown voltages ranging from 20 V to 200 V.
Siliconix is a leading manufacturer of power MOSFETs, power ICs, analog switches and multiplexers for computers, cell phones, fixed communications networks, automobiles, and other consumer and industrial electronic systems. With 2002 worldwide sales of $372.9 million, the Company's facilities include a Class 1, wafer fab dedicated to the manufacture of power products in Santa Clara, California, and an affiliated Class 1, wafer fab located in Itzehoe, Germany. The Company's products are also fabricated by subcontractors in Japan, Germany, China and Taiwan. Assembly and test facilities include a company-owned facility in Taiwan, a joint venture in Shanghai, China, and subcontractors in the Philippines, China, Taiwan, Israel, and the United States.
Vishay Intertechnology, Inc., a Fortune 1000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers
of discrete semiconductors (diodes, MOSFETs, and infrared optoelectronics) and passive electronic components (resistors, inductors,
and capacitors). These components are used in virtually all types of electronic devices and equipment, in the industrial,
computing, automotive, consumer, telecommunications, military, aerospace, power supplies, and medical markets. Vishay’s product
innovations, successful acquisition strategy, and "one-stop shop" service have made it a global industry leader. Vishay can
be found on the Internet at www.vishay.com.
WFET is a trademark and LITTLE FOOT, TrenchFET and PowerPAK are registered trademarks of Siliconix incorporated