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Media contact -  Bob Decker, Redpines
Phone:  1.415.409.0233 
Fax:  1.650.618.1512 
E-mail:  bob.decker@redpinesgroup.com

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New Vishay Siliconix Power MOSFETs in Thermally Enhanced PowerPAK 1212 8 Package Combine 3.3-mm by 3.3-mm Footprint, Thermal Resistance of Less Than 2 Degrees Celsius Per Watt, and On-Resistance Values Down to 3.7 Milliohms


For more information:
Media contact -  Bob Decker, Redpines
Phone:  1.415.409.0233 
Fax:  1.650.618.1512 
E-mail:  bob.decker@redpinesgroup.com

Sales contact: 

This release in:

MALVERN, Pa. — November 21, 2005 — Seventeen new power MOSFETs that offer exceptionally low on-resistance values down to 3.7 milliohms in the compact PowerPAK® 1212 8 package were released today by Vishay Intertechnology, Inc. (NYSE: VSH).

These TrenchFET® Gen II devices deliver significant space savings with dimensions of just 3.3 mm by 3.3 mm by 1 mm – just 1/3 the size of the SO 8 package – as well as low thermal resistance of 2 degrees Celsius per Watt for an eightfold improvement when compared with SO 8 devices.

Intended for synchronous rectification, synchronous buck, and intermediate switching applications in point of load (POL) converters and high-density dc-to-dc converters used in datacom systems, the new power MOSFETs enable designers to reduce board space dramatically and/or increase functionality without sacrificing performance. With their excellent electrical performance, the power MOSFETs introduced today serve as a viable replacement for SO-8 devices in many applications.

The 12-V through 40-V single n-channel devices released today feature on-resistance values ranging from 3.7 milliohms to 10 milliohms at a 4.5-V gate drive, and they include the 12-V Si7104DN, 20-V Si7106DN, Si7108DN, and Si7110DN; 30-V Si7112DN and Si7114DN; and 40-V Si7116DN.

Dual n-channel devices released today offer on-resistance values down to 36 milliohms and include the 30-V Si7212DN and Si7214DN, 40-V Si7222DN, and 60-V Si7220DN.

Also being released today in the PowerPAK 1212-8 package are the single-channel 60 V Si7120DN, 75-V Si7812DN, 150 V Si7818DN, 220-V Si7302DN, and 250-V Si7802DN. These devices feature on-resistance values ranging from 135 milliohms to 435 milliohms at a 10-V gate drive. The 200-V Si7820DN was previously released.

Samples and production quantities of the new power MOSFETs in the PowerPAK 1212-8 package are available now, with lead times of 12 weeks for larger orders.

Vishay Intertechnology, Inc., a Fortune 1000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers of discrete semiconductors (diodes, MOSFETs, and infrared optoelectronics) and passive electronic components (resistors, inductors, and capacitors). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, power supplies, and medical markets. Vishay’s product innovations, successful acquisition strategy, and "one-stop shop" service have made it a global industry leader. Vishay can be found on the Internet at www.vishay.com.

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TrenchFET and PowerPAK are registered trademarks of Siliconix incorporated

For more information:
Media contact -  Bob Decker, Redpines
Phone:  1.415.409.0233 
Fax:  1.650.618.1512 
E-mail:  bob.decker@redpinesgroup.com

Sales contact: 

This release in: