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Media contact -  Bob Decker, Redpines
Phone:  1.415.409.0233 
Fax:  1.650.618.1512 
E-mail:  bob.decker@redpinesgroup.com

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New Vishay Silconix N-Channel PowerPAK® ChipFET® MOSFETs Offer Same 3-W Maximum Power Dissipation as Larger SO-8 in 81 % Smaller Footprint

New Devices Feature Low On-Resistance Values Down to 0.015 Ω


For more information:
Media contact -  Bob Decker, Redpines
Phone:  1.415.409.0233 
Fax:  1.650.618.1512 
E-mail:  bob.decker@redpinesgroup.com

Sales contact: 

This release in:

MALVERN, Pa. — January 15, 2007 —Vishay Intertechnology, Inc. (NYSE: VSH) today released eight n-channel power MOSFETs in an innovative new PowerPAK® ChipFET® package that offers advanced thermal performance in a compact 3 mm by 1.8 mm footprint. Featuring a broad variety of configurations and voltages, the new devices allow designers to easily replace larger power MOSFETs in a wide range of power conversion applications.

As a space-saving alternative to MOSFETs in the much larger SO-8 package, the new PowerPAK ChipFET devices deliver higher power density by offering the same 3-W maximum power dissipation with an 81 % smaller footprint area, and a 48 % thinner height profile (0.8 mm).

For optimized design efficiency, n-channel power MOSFETs in Vishay’s new PowerPAK ChipFET family are designed for point-of-load, synchronous rectification, and logic-level dc-to-dc conversion applications in low-power computer and fixed telecomm applications where space is at a premium.

N-channel PowerPAK ChipFET devices will also be used as load switches in portable electronic systems and notebook PCs, delivering footprint savings of 33 %, a 23 % thinner height profile, and a 9 % reduction in on-resistance at a 4.5-V gate drive compared to power MOSFETs in the TSOP-6.

Among the eight new devices announced today are single, dual, and single-plus-Schottky-diode power MOSFETs, with breakdown voltage ratings from 20 V to 60 V.

Single n-channel power MOSFETs in the PowerPAK ChipFET family are rated for typical thermal resistance values as low as 3 °C/W (RthJC), with maximum on-resistance values as low as 0.015 Ω in a 20 VDS n-channel single-channel device, and 0.039 Ω in a dual-channel device. The single-plus-Schottky-diode power MOSFETs feature on-resistance values as low as 0.039 Ω and Schottky diode forward voltage of 0.375 V at 1 A.

All of these new PowerPAK ChipFET devices are pin-compatible with products in the standard ChipFET package.

Links to product datasheets:

Si5486DU
Si5484DU
Si5482DU
Si5480DU
Si5476DU
Si5858DU
Si5938DU
Si5944DU

Samples and production quantities of the new PowerPAK ChipFET devices are available now, with lead times of 12 to 14 weeks for larger orders.

Vishay Intertechnology, Inc., a Fortune 1000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers of discrete semiconductors (diodes, MOSFETs, and infrared optoelectronics) and passive electronic components (resistors, inductors, and capacitors). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, power supplies, and medical markets. Vishay’s product innovations, successful acquisition strategy, and "one-stop shop" service have made it a global industry leader. Vishay can be found on the Internet at www.vishay.com.

http://twitter.com/vishayindust
http://www.facebook.com/VishayIntertechnology

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PowerPAK and ChipFET are registered trademarks of Siliconix incorporated.

For more information:
Media contact -  Bob Decker, Redpines
Phone:  1.415.409.0233 
Fax:  1.650.618.1512 
E-mail:  bob.decker@redpinesgroup.com

Sales contact: 

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