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Vishay’s New 20-V to 40-V PolarPAK® Power MOSFETs Combine Thermal Benefits of Double-Sided Cooling Package with On-Resistance Down To 1.4 Milliohms
MALVERN, Pa. — January 22, 2007 — Vishay Intertechnology, Inc. (NYSE: VSH) is adding new n-channel 20-V, 30-V, and 40-V devices to its PolarPAK® family of power MOSFETs with double-sided cooling, giving designers a new way to reduce system size and cost through better MOSFET thermal performance.
Aimed at synchronous rectification, point-of-load converters, and OR-ing applications in telecom and data communications systems, the four new Vishay Siliconix PolarPAK devices announced today deliver up to 48% better on-resistance and 12% better on-resistance-times-gate-charge performance than the next-best devices on the market with double-sided cooling.
These improved specifications translate into lower conduction and switching losses that reduce power consumption in end systems. The dual heat dissipation paths provided by PolarPAK’s double-sided cooling construction allow high current densities in systems with forced air cooling, enabling more compact designs and/or the ability to reduce the number of paralleled MOSFETs. To the extent that paralleling is needed at all, PolarPAK simplifies such designs with its straightforward pin-out, minimizing inductance from board layouts, and thus improving efficiency, especially at higher frequencies.
The PolarPAK devices released today share the same footprint area as the standard SO-8 yet are twice as thin, with a height profile of just 0.8 mm. On-resistance for the new 20-V SiE810DF and SiE808DF, 30-V SiE806DF, and 40-V SiE812DF ranges from 1.4 mΩ to 2.6 mΩ. Their on-resistance-times-gate-charge figure of merit (FOM) is exceptionally low as well. With FOMs of 127.5 and 135.2 respectively, the 30-V and 40-V devices offer nearly the same FOM for synchronous rectification applications while allowing the choice of the higher rating for applications that can use the additional headroom provided by the 40-V breakdown voltage device.
For applications where minimizing switching losses is more critical than low conduction losses, Vishay is also releasing two PolarPAK devices with somewhat higher on-resistance. At a 10-V gate drive, the 30-V SiE830DF is rated for 4.2 mΩ and the 40-V SiE832DF is rated at 5.5 milliohms.
In addition to their reduced power consumption and thermal management benefits, Vishay Siliconix PolarPAK power MOSFETs are designed to give manufacturers maximum flexibility, reliability, and ease in handling. A fixed footprint and pad layout, independent of die size across the range of the family, eliminates the need for re-design when newer generations of silicon are introduced. Their standard leadframe and plastic encapsulation construction provide better die protection. As a result, PolarPAK has quickly earned the distinction of being the first MOSFET package with double-sided cooling to be sourced by multiple manufacturers.
Samples and production quantities of the new PolarPAK power MOSFETs are available now, with lead times of 8 to 10 weeks for larger orders.
Vishay Intertechnology, Inc., a Fortune 1000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers
of discrete semiconductors (diodes, MOSFETs, and infrared optoelectronics) and passive electronic components (resistors, inductors,
and capacitors). These components are used in virtually all types of electronic devices and equipment, in the industrial,
computing, automotive, consumer, telecommunications, military, aerospace, power supplies, and medical markets. Vishay’s product
innovations, successful acquisition strategy, and "one-stop shop" service have made it a global industry leader. Vishay can
be found on the Internet at www.vishay.com.
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